L6571A 查看數據表（PDF） - STMicroelectronics

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L6571A

HIGH VOLTAGE HALF BRIDGE DRIVER WITH OSCILLATOR

STMicroelectronics 

L6571A L6571B

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

Value

Unit

IS (*) Supply Current

25

mA

VCF

Oscillator Resistor Voltage

18

V

VLVG Low Side Switch Gate Output

14.6

V

VOUT High Side Switch Source Output

-1 to VBOOT - 18

V

VHVG High Side Switch Gate Output

-1 to VBOOT

V

VBOOT Floating Supply Voltage

618

V

VBOOT/OUT Floating Supply vs OUT Voltage

18

V

dVBOOT/dt VBOOT Slew Rate (Repetitive)

± 50

V/ns

dVOUT/dt VOUT Slew Rate (Repetitive)

± 50

V/ns

Tstg

Storage Temperature

-40 to 150

°C

Tj

Junction Temperature

-40 to 150

°C

Tamb Ambient Temperature (Operative)

-40 to 125

°C

(*)The device has an internal zener clamp between GND and VS (typical 15.6V).Therefore the circuit should not be driven by a DC low im-

pedance power source.

Note: ESD immunity for pins 6, 7 and 8 is guaranteed up to 900 V (Human Body Model)

THERMAL DATA

Symbol

Parameter

Rth j-amb Thermal Resistance Junction-Ambient Max

Minidip

100

SO8

150

Unit

°C/W

RECOMMENDED OPERATING CONDITIONS

Symbol

Parameter

VS

Supply Voltage

VBOOT Floating Supply Voltage

VOUT High Side Switch Source Output

fout

Oscillation Frequency

Min.

10

-

-1

Max.

VCL

500

VBOOT -VCL

200

Unit

V

V

V

kHz

PIN CONNECTION

VS

RF

CF

GND

1

8

2

7

3

6

4

5

D94IN059

BOOT

HVG

OUT

LVG

2/8

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