L6571A 查看數據表（PDF） - STMicroelectronics

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L6571A

HIGH VOLTAGE HALF BRIDGE DRIVER WITH OSCILLATOR

STMicroelectronics 

L6571A L6571B

PIN FUNCTION

N°

Pin

Description

1

VS Supply input voltage with internal clamp [typ. 15.6V]

2

RF Oscillator timing resistor pin.

A buffer set alternatively to VS and GND can provide current to the external resistor RF

connected between pin 2 and 3.

Alternatively, the signal on pin 2 can be used also to drive another IC (i.e. another L6569/71 to

drive a full H-bridge)

3

CF Oscillator timing capacitor pin.

A capacitor connected between this pin and GND fixes (together with RF) the oscillating

frequency

Alternatively an external logic signal can be applied to the pin to drive the IC.

4

GND Ground

5

LVG Low side driver output.

The output stage can deliver 170mA source and 270mA sink [typ.values].

6

OUT Upper driver floating reference

7

HVG High side driver output.

The output stage can deliver 170mA source and 270mA sink [typ.values].

8

BOOT Bootstrap voltage supply.

It is the upper driver floating supply.

ELECTRICAL CHARACTERISTCS (VS = 12V; VBOOT - VOUT = 12V; Tj = 25°C; unless otherwise specified.)

Symbol Pin

Parameter

Test Condition

Min. Typ. Max. Unit

VSUVP 1 VS Turn On Threshold

8.3

9

9.7

V

VSUVN

VS Turn Off Threshold

7.3

8

8.7

V

VSUVH

VS Hysteresis

0.7

1

1.3

V

VCL

VS Clamping Voltage

IS = 5mA

14.6 15.6 16.6

V

ISU

Start Up Current

VS < VSUVN

150

250

µA

Iq

Quiescent Current

VS > VSUVP

500

700

µA

IBOOTLK 8 Leakage Current BOOT pin vs

GND

VBOOT = 580V

5

µA

IOUTLK

6 Leakage Current OUT pin vs

GND

VOUT = 562V

5

µA

IHVG SO 7 High Side Driver Source Current VHVG = 6V

110 175

mA

IHVG SI

High Side Driver Sink Current

VHVG = 6V

190 275

mA

ILVG SO 5 Low Side Driver Source Current VLVG = 6V

110 175

mA

ILVG SI

Low Side Driver Sink Current

VLVG = 6V

190 275

mA

VRFON 2 RF High Level Output Voltage

IRF = 1mA

VS -0.05

VS -0.2 V

VRF OFF

RF Low Level Output Voltage

IRF = -1mA

50

200 mV

VCFU

3 CF Upper Threshold

7.7

8

8.2

V

VCFL

CF Lower Threshold

3.80

4

4.3

V

td

Internal Dead Time

L6571A

L6571B

0.85 1.25 1.65

µs

0.50 0.72 0.94

µs

3/8

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