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L6591(2008) 查看數據表(PDF) - STMicroelectronics

零件编号
产品描述 (功能)
生产厂家
L6591
(Rev.:2008)
ST-Microelectronics
STMicroelectronics ST-Microelectronics
L6591 Datasheet PDF : 32 Pages
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Electrical characteristics
L6591
Table 4.
Symbol
Electrical characteristics (continued)
(TJ = 0 to 105 °C, Vcc = 15 V, VBOOT = 12 V, CHVG = CLVG = 1 nF; RT = 22 k,
CT = 330 pF; unless otherwise specified)
Parameter
Test condition
Min Typ Max Unit
DIS function
IOTP Input bias current
Vth Disable threshold
VDIS = 0 to Vth
-1
µA
4.275 4.5 4.725 V
Oscillator and dead-time programming
fosc
Vpk
Vvy
Tdead
Oscillation frequency
Oscillator peak voltage
Oscillator valley voltage
TJ = 25 °C
Vcc = 9.2 to 22 V
(2)
(2)
Dead-time
(VHVG high-to-low to VLVG
low-to-high transition)
CT = 1 nF
Dead-time (VLVG high-to-low
to VHVG low-to-high
transition)
CT = 1 nF
170 180 190 kHz
168 180 192 kHz
2.85
3
3.15 V
0.75 0.9 1.05 V
0.42
1.0
µs
0.42
1.0
Soft-start
ISSC Charge current
ISsdis Discharge current
VSsclamp High saturation voltage
VSSDIS Disable level
VSSLAT Latch-off level
PFC_STOP function
TJ = 25 °C, VSS < 1.5 V,
VCOMP = 4 V
14
17
20
µA
TJ = 25 °C, VSS > 1.5 V,
VCOMP = VCOMPH
3.0
4.2
5.4
VSS > 1.5 V
3.0 4.2 5.4 µA
VCOMP = 4 V
2
V
(2) VCOMP = VCOMPH
4.85
5
5.15 V
VCOMP = VCOMPH
6.4
V
Ileak
High level leakage current
VPFC_STOP = Vcc,
VCOMP = 2 V
VL Low saturation level
IPFC_STOP = 2 mA
VCOMP = 1.5 V
Low-side gate driver (voltages referred to GND)
1
µA
0.1
V
VLVGL Output low voltage
VLVGH
Isourcepk
Isinkpk
Output high voltage
Peak source current (3)
Peak sink current (3)
tf
Fall time
Isink = 200 mA
Isource = 5 mA
1.0
V
12.8 13.3
V
-0.3
A
0.8
A
40
ns
10/32

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