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L9332 查看數據表(PDF) - STMicroelectronics

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L9332 Datasheet PDF : 17 Pages
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Electrical specifications
4
Electrical specifications
L9332
4.1
Thermal data
Table 4. Thermal data
Symbol
Parameter
RTH(j-c) Thermal resistance junction to case for Power SO-20
Value
3
Unit
°C/W
4.2
Note:
Absolute maximum ratings
Table 5.
Symbol
Absolute maximum ratings
Parameter
Conditions
Value
Unit
VS
VSP
dVS/dt
VIN, EN
VD
VODC
IO
IOR
EO1, 2
EO3, 4
ΔVGND
DC supply voltage
Supply voltage pulse (duration <200 ms)
Supply voltage slope
Input voltage
I10 mA
Diagnostic DC output voltage
I50 mA
DC output voltage
DC output current out
Reverse output current
Switch-off energy for inductive loads
tEO = 250 µs
T = 5ms
GND potential difference
Σt 4800 h
Tj
Junction temperature
Σt 1200 h
Σt 160 h
Σt 50 h
Tstg Storage temperature
-0.3 to 32
V
-0.3 to 45
V
10
V/µs
-1.5 to 6
V
-0.3 to 16
V
-0.3 to 45
V
3
A
-3
A
50
mJ
30
mJ
0.3
V
-40 to 145
°C
145 to 160
°C
160 to 170
°C
170 to 175
°C
-40 to 175
°C
For diagnostic output (Dx Pins), maximum supply voltage during Latch-up = 20V
4.3
Note:
ESD protection
Table 6. ESD protection
Symbol
Parameter
Test conditions
VO
Outputs test voltage
Vs, IN EN D All other pins
Versus GND + PG shorted
Versus GND
Tested according to JEDEC (Norm: JESD22-A114C.01).
Value Unit
3.75
kV
2
kV
8/17

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