L9352 查看數據表（PDF） - STMicroelectronics
零件编号
产品描述 (功能)
生产厂家
L9352 Datasheet PDF : 21 Pages
| |||
L9352
ABSOLUTE MAXIMUM RATINGS
The absolute maximum ratings are the limiting values for this device. Damage may occur if this device is sub-
jected to conditions which are beyond these values.
Symbol
Parameter
Test Conditions
Min
Typ Max Unit
EQ
Voltages
Switch off energy for inductive loads
50
mJ
VS
Supply voltage
-0.3
VCC, VDD Supply voltage
-0.3
VQ
Output voltage static
VQ
Output voltage during clamping
t < 1ms
VIN, VEN Input voltage IN1 to IN4, EN
II < |10|mA
-1.5
VCLK
Input Voltage CLK
-1.5
VST
Output voltage status
-0.3
VD
Recirculation circuits D3, D4
VDRmax
max. reverse breakdown voltage of free
wheeling diodes D3, D4
40
V
6
V
40
V
60
V
6
V
6
V
6
V
40
V
55
V
Currents
IQ1/2
Output current for Q1 and Q2
>5
internal A
limited
IQ3/4
Output current for Q3 and Q4
>3
internal A
limited
IQ1/2,
IPGND1/2
Output current at reversal supply for Q1
and Q2
IQ3/4,
IPGND3/4
Output current at reversal supply for
Q3 and Q4
IST
Output current status pin
ESD Protection
-4
A
-2
A
-5
5
mA
ESD
Electrostatical Discharging
MIL883C
±2
kV
GND, PGND, Qx, Dx, CLK, ST, IN,
TEST, EN
VS,
Supply pins
VCC,VDD
vs. GND and PGND
±1
kV
ESD
Output Pins (Qx, Dx)
vs. Common GND
±4
kV
(PGND1-4 + GND)
THERMAL DATA
Symbol
Parameter
Test Conditions
Min
Typ Max Unit
Tj
Junction temperature
Tj
-40
Tjc
Junction temperature during clamping Σt = 30min
(life time)
Σt = 15min
Tstg
Storage temperature
Tstg
-55
Tth
Overtemperature shutdown threshold (1)
175
150
°C
175
°C
190
150
°C
200
°C
Thy
RthJC
Overtemperature shutdown hysteresis
Thermal resistance junction to case
(1)
RthJC
10
°C
2
K/W
(1) This parameter will not be tested but assured by design
4/21
Share Link: 