ZXT13N50DE6 查看數據表（PDF） - Zetex => Diodes

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ZXT13N50DE6

50V NPN SILICON LOW SATURATION SWITCHING TRANSISTOR

Zetex => Diodes 

ZXT13N50DE6

ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).

PARAMETER

SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.

Collector-Base Breakdown

Voltage

V(BR)CBO 100

190

V

IC=100␮A

Collector-Emitter Breakdown

Voltage

V(BR)CEO 50

70

V

IC=10mA*

Emitter-Base Breakdown Voltage V(BR)EBO 7.5

Collector Cut-Off Current

ICBO

Emitter Cut-Off Current

IEBO

Collector Emitter Cut-Off Current ICES

Collector-Emitter Saturation

Voltage

VCE(sat)

Base-Emitter Saturation Voltage VBE(sat)

Base-Emitter Turn-On Voltage

VBE(on)

Static Forward Current Transfer hFE

250

Ratio

300

100

10

Transition Frequency

fT

8.5

100

100

100

8.0 12

75

100

150

200

175

230

145

180

1.0

0.9

400

450

900

220

30

115

V

nA

nA

nA

mV

mV

mV

mV

mV

V

V

MHz

IE=100␮A

VCB=80V

VEB=6V

VCES=80V

IC=0.1A, IB=10mA*

IC=1A, IB=10mA*

IC=3A, IB=50mA*

IC=4A, IB=100mA*

IC=4A, IB=400mA*

IC=4A, IB=100mA*

IC=4A, VCE=2V*

IC=10mA, VCE=2V*

IC=1A, VCE=2V*

IC=4A, VCE=2V*

IC=10A, VCE=2V*

IC=50mA, VCE10V

f=50MHz

Output Capacitance

Cobo

31

Turn-On Time

t(on)

220

Turn-Off Time

t(off)

830

*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%

pF

VCB=10V, f=1MHz

ns

VCC=10V, IC=1A

IB1=IB2=20mA

ns

ISSUE 1 - NOVEMBER 1999

4

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