Philips Semiconductors
NPN/PNP resistor-equipped transistors;
R1 = 2.2 kΩ, R2 = 47 kΩ
Preliminary specification
PEMD10
FEATURES
• 300 mW total power dissipation
• Very small 1.6 × 1.2 mm ultra thin package
• Excellent coplanarity due to straight leads
• Replaces two SC-75/SC-89 packaged transistors on
same PCB area
• Reduces required PCB area
• Reduced pick and place costs.
APPLICATIONS
• General purpose switching and amplification
• Inverter and interface circuits
• Circuit driver.
DESCRIPTION
NPN/PNP resistor-equipped transistors in a SOT666
plastic package.
MARKING
TYPE NUMBER
PEMD10
MARKING CODE
D1
QUICK REFERENCE DATA
SYMBOL
PARAMETER
VCEO
ICM
R1
collector-emitter voltage
peak collector current
bias resistor
R2
bias resistor
MAX. UNIT
50
V
100 mA
2.2 kΩ
47
kΩ
PINNING
PIN
SYMBOL
1, 4 TR1; TR2
2, 5 TR1; TR2
6, 3 TR1; TR2
DESCRIPTION
emitter
base
collector
handbook, ha6lfpage 5
4
6
5
4
R1 R2
TR2
TR1
R2 R1
1
2
3
1
2
3
Top view
MAM448
Fig.1 Simplified outline (SOT666) and symbol.
2, 5
6, 3
MBK120
1, 4
Fig.2 Equivalent inverter symbol.
2001 Sep 11
2