PEMD10 查看數據表（PDF） - Philips Electronics

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PEMD10

NPN/PNP resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 47 kΩ

Philips Electronics 

Philips Semiconductors

NPN/PNP resistor-equipped transistors;

R1 = 2.2 kΩ, R2 = 47 kΩ

Preliminary specification

PEMD10

CHARACTERISTICS

Tamb = 25 °C; unless otherwise specified.

SYMBOL

PARAMETER

CONDITIONS

MIN. TYP. MAX. UNIT

Per transistor; for the PNP transistor with negative polarity

ICBO

ICEO

IEBO

hFE

VCEsat

Vi(off)

Vi(on)

R1

RR-----21--

collector-base cut-off current

collector-emitter cut-off current

emitter-base cut-off current

DC current gain

collector-emitter saturation voltage

input off voltage

input on voltage

input resistor

resistor ratio

VCB = 50 V; IE = 0

VCE = 50 V; IB = 0

VCE = 30 V; IB = 0; Tj = 150 °C

VEB = 5 V; IC = 0

VCE = 5 V; IC = 10 mA

IC = 5 mA; IB = 0.25 mA

VCE = 5 V; IC = 100 µA

VCE = 0.3 V; IC = 5 mA

−

−

100 nA

−

−

1

µA

−

−

50

µA

−

−

180 µA

100 −

−

−

−

100 mV

−

0.6 0.5 V

1.1 0.75 −

V

1.54 2.2 2.86 kΩ

17

21

26

Cc

collector capacitance

TR1 (NPN)

TR2 (PNP)

IE = ie = 0; VCB = 10 V; f = 1 MHz

−

−

2.5 pF

−

−

3

pF

2001 Sep 11

4

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