BC857BRLT1 查看數據表（PDF） - Leshan Radio Company

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BC857BRLT1

General Purpose Transistors NPN SiliconGeneral Purpose Transistors

Leshan Radio Company 

LESHAN RADIO COMPANY, LTD.

BC857BRLT1

Fig.7 Collector-emitter saturation voltage vs.

collector current ( )

–1

I C /I B = 10

–0.5

Fig.8 Gain bandwidth product vs. emitter current

1000

T A = 25°C

V CE = –12V

500

–0.2

–0.1

–0.05

T A = 100°C

25°C

–40°C

–0.2

–0.5

–1

–2

–5

–10 –20

I C, COLLECTOR CURRENT (mA)

–50 –100

200

100

50

–0.2

–0.5

–1

–2

–5

–10

–20

I E, EMITTER CURRENT (mA)

–50 –100

Fig.9 Collector output capacitance vs.collector-base voltage

Emitter inputcapacitance vs. emitter-base voltage

20

C ib

10

T A = 25°C

f =1MHz

I E = 0A

I C = 0A

C ob

5

2

–0.5 –1

–2

–5

–10

–20

V CB, COLLECTOR TO BASE VOLTAGE (V)

V EB, EMITTER TO BASE VOLTAGE (V)

M35–3/3

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