MMBT5087LT1 查看數據表（PDF） - Leshan Radio Company

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MMBT5087LT1

Low Noise Transistor

Leshan Radio Company 

LESHAN RADIO COMPANY, LTD.

Low Noise Transistor

PNP Silicon

MMBT5087LT1

1

BASE

3

COLLECTOR

2

EMITTER

MAXIMUM RATINGS

Rating

Collector–Emitter Voltage

Collector–Base Voltage

Emitter–Base Voltage

Collector Current — Continuous

DEVICE MARKING

MMBT5087LT=2Q

THERMAL CHARACTERISTICS

Characteristic

Total Device Dissipation RF-5 Board (1)

T A =25 °C

Derate above 25°C

Thermal Resistance, Junction to Ambient

Total Device Dissipation

Alumina Substrate, (2) T A = 25°C

Derate above 25°C

Thermal Resistance, Junction to Ambient

Junction and Storage Temperature

Symbol

V CEO

V CBO

V EBO

IC

Value

– 50

– 50

– 3.0

– 50

Unit

Vdc

Vdc

Vdc

mAdc

Symbol

PD

R θJA

PD

R θJA

T J , T stg

Max

225

1.8

556

300

2.4

417

–55 to +150

3

1

2

CASE 318–08, STYLE 6

SOT– 23 (TO–236AB)

Unit

mW

mW/°C

°C/W

mW

mW/°C

°C/W

°C

ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted)

Characteristic

Symbol

OFF CHARACTERISTICS

Collector–Emitter Breakdown Voltage

(I C = –1.0 mAdc, I B = 0)

Collector–Base Breakdown Voltage

(I C = –100 µAdc, I E = 0)

V (BR)CEO

V (BR)CBO

Collector Cutoff Current

I CBO

(V CB = –10 Vdc, I E= 0)

(V CB = –35 Vdc, I E= 0)

1. FR–5 = 1.0 x 0.75 x 0.062 in.

2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.

Min

– 50

– 50

—

—

Max

—

—

–10

–50

Unit

Vdc

Vdc

n Adc

M17–1/6

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