LS101B(2006) 查看數據表（PDF） - Vishay Semiconductors

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LS101B
(Rev.:2006)

Small Signal Schottky Diodes

Vishay Semiconductors 

LS101A / 101B / 101C

Vishay Semiconductors

Thermal Characteristics

Tamb = 25 °C, unless otherwise specified

Parameter

Test condition

Junction to ambient air

on PC board

50 mm x 50 mm x 1.6 mm

Junction temperature

Storage temperature range

Electrical Characteristics

Tamb = 25 °C, unless otherwise specified

Parameter

Test condition

Reverse Breakdown Voltage IR = 10 µA

Leakage current

Forward voltage drop

VR = 50 V

VR = 40 V

VR = 30 V

IF = 1 mA

IF = 15 mA

Diode capacitance

VR = 0 V, f = 1 MHz

Typical Characteristics

Tamb = 25 °C, unless otherwise specified

Symbol

Value

Unit

RthJA

320

K/W

Tj

125

°C

Tstg

- 65 to + 150

°C

Part

Symbol

Min

LS101A V(BR)R

60

LS101B V(BR)R

50

LS101C V(BR)R

40

LS101A

IR

LS101B

IR

LS101C

IR

LS101A

VF

LS101B

VF

LS101C

VF

LS101A

VF

LS101B

VF

LS101C

VF

LS101A

CD

LS101B

CD

LS101C

CD

Typ.

Max

Unit

V

V

V

200

nA

200

nA

200

nA

410

mV

400

mV

390

mV

1000

mV

950

mV

900

mV

2.0

pF

2.1

pF

2.2

pF

100

Tj = 125 °C

10

Tj = 100 °C

1

Tj = 75 °C

Tj = 50 °C

0.1

Tj = 25 °C

0.01

0 5 10 15 20 25 30 35 40 45 50

16204

VR - Reverse Voltage (V)

Figure 1. Reverse Current vs. Reverse Voltage

2.0

1.8

Tj = 25 °C

1.6

1.4

1.2

1.0

0.8

0.6

0.4

0.2

0.0

0

16205

5 10 15 20 25 30 35 40 45 50

VR - Reverse Voltage (V)

Figure 2. Diode Capacitance vs. Reverse Voltage

www.vishay.com

2

Document Number 85628

Rev. 1.4, 21-Mar-06

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