LS101B-GS18 查看數據表（PDF） - Vishay Semiconductors
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LS101B-GS18 Datasheet PDF : 4 Pages
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LS101A, LS101B, LS101C
Vishay Semiconductors
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL SYMBOL MIN.
Reverse breakdown voltage
Leakage current
Forward voltage drop
Diode capacitance
IR = 10 μA
VR = 50 V
VR = 40 V
VR = 30 V
IF = 1 mA
IF = 15 mA
VR = 0 V, f = 1 MHz
LS101A
V(BR)
60
LS101B
V(BR)
50
LS101C
V(BR)
40
LS101A
IR
LS101B
IR
LS101C
IR
LS101A
VF
LS101B
VF
LS101C
VF
LS101A
VF
LS101B
VF
LS101C
VF
LS101A
CD
LS101B
CD
LS101C
CD
TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
TYP.
MAX.
200
200
200
410
400
390
1000
950
900
2
2.1
2.2
UNIT
V
V
V
nA
nA
nA
mV
mV
mV
mV
mV
mV
pF
pF
pF
100
10.00
Tj = 125 °C
10
Tj = 100 °C
1
Tj = 75 °C
Tj = 50 °C
0.1
Tj = 25 °C
0.01
0
16204
5 10 15 20 25 30 35 40 45 50
VR - Reverse Voltage (V)
Fig. 1 - Reverse Current vs. Reverse Voltage
1.00
0.10
0.01
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
16206
VF - Forward Voltage (V)
Fig. 3 - Forward Current vs. Forward Voltage
2.0
1.8
T = 25 °C
j
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0
16205
5 10 15 20 25 30 35 40 45 50
VR - Reverse Voltage (V)
Fig. 2 - Diode Capacitance vs. Reverse Voltage
Rev. 1.7, 01-Jun-17
2
Document Number: 85628
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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