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LT1101IN8 查看數據表(PDF) - Linear Technology

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LT1101IN8 Datasheet PDF : 16 Pages
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LT1101
ELECTRICAL CHARACTERISTICS VS = 5V, 0V, VCM = 0.1V, VREF(PIN 1) = 0.1V, Gain = 10 or 100,
– 40°C TA 85°C for AI/I grades, unless otherwise noted (Note 4).
SYMBOL PARAMETER
CONDITIONS
LT1101AM/AI
LT1101M/I
MIN TYP MAX MIN TYP MAX
GE
TCGE
GNL
VOS
Gain Error
Gain Error Drift
Gain Nonlinearity
Input Offset Voltage
G = 100, V0 = 0.1V to 3.5V, RL = 50k
G = 10, VCM = 0.15, RL = 50k
RL = 50k (Note 2)
G = 100, RL = 50k
G = 10, RL = 50k (Note 2)
LT1101ISW
0.026
0.011
1
45
4
90
0.080
0.070
4
110
13
350
0.028
0.014
1
48
5
110
110
0.120
0.100
5
140
15
500
950
VOS/T Input Offset Voltage Drift (Note 2)
LT1101ISW
0.4 2.0
0.5
2.8
0.5
4.8
lOS
Input Offset Current
VOS/T Input Offset Current Drift
IB
Input Bias Current
IB/T Input Bias Current Drift
(Note 2)
(Note 2)
0.16 0.80
0.5 4.0
7
10
10
25
0.19 1.30
0.8
7.0
7
12
10
30
CMRR
IS
Common Mode
Rejection Ratio
Supply Current
G = 100, VCM = 0.1V to 3.2V
91
G = 10, VCM = 0.1V to 2.9V, VREF = 0.15V 80
105
88
98
77
88 135
104
97
92
160
V0
Maximum 0utput
Voltage Swing
Output High, 50k to GND
Output High, 2k to GND
Output Low, VREF = 0, No Load
Output Low, VREF = 0, 2k to GND
Output Low, VREF = 0, ISINK = 100µA
3.8
4.1
3.8
4.1
3.0
3.7
3.0
3.7
4.5
8
4.5
8
0.7 1.5
0.7
1.5
125 170
125
170
UNITS
%
%
ppm/°C
ppm
ppm
µV
µV
µV/°C
µV/°C
nA
pA/°C
nA
pA/°C
dB
dB
µA
V
V
mV
mV
mV
1101fa
6

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