DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

RD100E-T1 查看數據表(PDF) - NEC => Renesas Technology

零件编号
产品描述 (功能)
生产厂家
RD100E-T1
NEC
NEC => Renesas Technology NEC
RD100E-T1 Datasheet PDF : 9 Pages
1 2 3 4 5 6 7 8 9
RD2.0E to RD120E
TYPICAL CHARACTERISTICS (TA = 25°C)
Figure 1. P vs. TA Rating
600
500
400
10 mm
300
200
φ 3 mm printing foil
t = 0.035 mm
100
= 5 mm
= 10 mm
7 mm printing foil
t = 0.035 mm
Figure 2. Rth vs. S Example of Characteristics
600
Connection
pedestal
500
400
S
300
= 10 mm
200
= 5 mm
100
0
0
0 20 40 60 80 100 120 140 160 180 200
0
TA - Ambient Temperature - ˚C
20
40
60
80
100
S - Printing Foil Area - mm2
RD2.0E
RD2.2E
RD2.4E
RD2.7E
100 m
RD3.0E
RD3.3E
RD3.6E
RD3.9E
RD4.3E
10 m RD4.7E
RD5.1E
RD5.6E RD7.5E
RD
RD 6.8E
6.2E RD8.2E
RD9.1E
Figure 3. Iz vs. Vz Rating
100 m
10 m
RD11E
RD10E
RD12E
RD13E
1m
1m
100 µ
100 µ
10 µ
10 µ
1µ
1µ
100 n
100 n
10 n
1n
0123456789
VZ - Zener Voltage - V
10 n
1n
0 7 8 9 10 11 12 13 14 15
VZ - Zener Voltage - V
100 m
10 m
RD15E RD18E
RD16E RD20E
1m
100 µ
10 µ
1µ
100 n
10 n
1n
0 12 13 14 15 16 17 18 19 20
VZ - Zener Voltage - V
(a)
(b)
(c)
6
Data Sheet D10211EJ6V1DS

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]