LTC1155 查看數據表（PDF） - Linear Technology

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LTC1155

Dual High Side Micropower MOSFET Driver

Linear Technology 

LTC1155

APPLICATI S I FOR ATIO

VS = 4.5V TO 18V

CDLY

RSEN

100k

5V

VS

DS1

IN1 LTC1155

G1

GND

300Ω

1/4W

GND

RDLY

+

10µF

25V

LOAD

1155 F05

Figure 5. Reverse Battery Protection

Overvoltage Protection

The MOSFET and load can be protected against overvolt-

age conditions by using the circuit of Figure 6. The drain

sense function is used to detect an overvoltage condition

and quickly discharge the power MOSFET gate. The 18V

zener diode conducts when the supply voltage exceeds

18.6V and pulls the drain sense pin 0.6V below the supply

pin voltage.

The supply voltage is limited to 18.6V and the gate drive is

immediately removed from the MOSFET to ensure that it

cannot conduct during the overvoltage period. The gate of

the MOSFET will be latched OFF until the supply transient

is removed and the input turned OFF and ON again.

VS = 4.5V TO 18V

510Ω

10k

VS

DS1

1N4148

IN1 LTC1155

G1

GND

18V

GND

LOAD

1155 F06

Figure 6. Overvoltage Shutdown and Protection

TYPICAL APPLICATI S

Dual 2A Autoreset Electronic Fuse

5V

8

LMC555

1

+

10µF

0.03Ω

0.1µF

30k

0.1µF

30k

0.03Ω

1/2 SI9956DY

4

3 fO = 1Hz

1N4148

100k

750k 1N4148

2

6

OUT 1

1.0µF

DS1 VS

G1

DS2

G2

LTC1155

IN1

IN2

GND

1/2 SI9956DY

100k

OUT 2

ALL COMPONENTS SHOWN ARE SURFACE MOUNT

1155 TA03

9

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