LTC1700_ 查看數據表（PDF） - Linear Technology
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LTC1700_ Datasheet PDF : 32 Pages
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LTC1871-7
APPLICATIO S I FOR ATIO
2.0
1.5
1.0
0.5
0
– 50
0
50
100
150
JUNCTION TEMPERATURE (°C)
18717 F12
Figure 12. Normalized RDS(ON) vs Temperature
From a known power dissipated in the power MOSFET, its
junction temperature can be obtained using the following
formula:
TJ = TA + PFET • RTH(JA)
The RTH(JA) to be used in this equation normally includes
the RTH(JC) for the device plus the thermal resistance from
the case to the ambient temperature (RTH(CA)). This value
of TJ can then be compared to the original, assumed value
used in the iterative calculation process.
Boost Converter: Output Diode Selection
To maximize efficiency, a fast switching diode with low
forward drop and low reverse leakage is desired. The
output diode in a boost converter conducts current during
the switch off-time. The peak reverse voltage that the
diode must withstand is equal to the regulator output
voltage. The average forward current in normal operation
is equal to the output current, and the peak current is equal
to the peak inductor current.
ID(PEAK)
=
IL(PEAK)
=
1+
χ
2
•
IO(MAX)
1– DMAX
The power dissipated by the diode is:
PD = IO(MAX) • VD
and the diode junction temperature is:
TJ = TA + PD • RTH(JA)
16
The RTH(JA) to be used in this equation normally includes
the RTH(JC) for the device plus the thermal resistance from
the board to the ambient temperature in the enclosure.
Remember to keep the diode lead lengths short and to
observe proper switch-node layout (see Board Layout
Checklist) to avoid excessive ringing and increased
dissipation.
Boost Converter: Output Capacitor Selection
Contributions of ESR (equivalent series resistance), ESL
(equivalent series inductance) and the bulk capacitance
must be considered when choosing the correct compo-
nent for a given output ripple voltage. The effects of these
three parameters (ESR, ESL and bulk C) on the output
voltage ripple waveform are illustrated in Figure 13 for a
typical boost converter.
The choice of component(s) begins with the maximum
acceptable ripple voltage (expressed as a percentage of
the output voltage), and how this ripple should be divided
between the ESR step and the charging/discharging ∆V.
For the purpose of simplicity we will choose 2% for the
maximum output ripple, to be divided equally between the
ESR step and the charging/discharging ∆V. This percent-
age ripple will change, depending on the requirements of
the application, and the equations provided below can
easily be modified.
For a 1% contribution to the total ripple voltage, the ESR
of the output capacitor can be determined using the
following equation:
ESRCOUT
≤
0.01• VO
IIN(PEAK)
where:
IIN(PEAK)=
1+
χ
2
•
IO(MAX)
1– DMAX
For the bulk C component, which also contributes 1% to
the total ripple:
C OUT
≥
IO(MAX)
0.01• VO •
f
18717f
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