LTC3411A(RevA) 查看數據表（PDF） - Linear Technology
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LTC3411A Datasheet PDF : 20 Pages
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LTC3411A
ELECTRICAL CHARACTERISTICS The ● denotes the specifications which apply over the full operating
temperature range, otherwise specifications are at TA = 25°C, VIN = 3.6V, RT = 125k unless otherwise specified. (Note 2)
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP
MAX UNITS
IS
VSHDN/RT
fOSC
fSYNC
Input DC Supply Current (Note 4)
Active Mode
Sleep Mode
Shutdown
Shutdown Threshold High Active
Oscillator Resistor
Oscillator Frequency
Synchronization Frequency
VSYNC/MODE = 3.6V, VFB = 0.75V
VSYNC/MODE = 3.6V, VFB = 0.84V
VSHDN/RT = 3.6V
RT = 125k
(Note 7)
(Note 7)
330
450
μA
40
60
μA
0.1
1
μA
VIN – 0.6 VIN – 0.4
V
125k
1M
Ω
2.25
2.5
2.8
MHz
4
MHz
0.4
4
MHz
ILIM
Peak Switch Current Limit
VFB = 0.5V
1.6
2.1
2.6
A
RDS(ON)
ISW(LKG)
VUVLO
Top Switch On-Resistance
Bottom Switch On-Resistance
Switch Leakage Current
Undervoltage Lockout Threshold
MS Package
DD Package (Note 6)
MS Package
DD Package (Note 6)
VIN = 5.5V, VSHDN/RT = 5.5V, VSW = 0V
or 5.5V
VIN Ramping Down
0.15
0.18
Ω
0.15
Ω
0.13
0.16
Ω
0.13
Ω
0.01
1
μA
1.8
2.1
2.4
V
PGOOD
RPGOOD
Power Good Threshold
VFB Ramping Up from 0.68V to 0.8V
VFB Ramping Down from 0.92V to 0.8V
Power Bad Threshold
VFB Ramping Down from 0.8V to 0.68V
VFB Ramping Up from 0.8V to 0.9V
Power Good Pull-Down On-Resistance
–5
–7
%
5
7
%
–10
–12
%
10
12
%
15
30
Ω
PGOOD Blanking
VSYNC-MODE
tSOFT-START
Pulse Skip
Force Continous
Burst
VFB Step from 0V to 0.8V
VFB Step from 0.8V to 0V
10% to 90% of Regulation
40
μs
105
μs
0.63
V
0.93
VIN – 0.75
VIN – 1.05
V
V
0.5
0.8
1.0
ms
Note 1: Stresses beyond those listed under Absolute Maximum Ratings
may cause permanent damage to the device. Exposure to any Absolute
Maximum Rating condition for extended periods may affect device
reliability and lifetime.
Note 2: The LTC3411AE is guaranteed to meet performance specifications
from 0°C to 85°C junction temperature. Specifications over the –40°C
to 125°C operating junction temperature range are assured by design,
characterization and correlation with statistical process controls. The
LTC3411AI is guaranteed over the full –40°C to 125°C operating junction
temperature range.
Note 3: The LTC3411A is tested in a feedback loop which servos VFB to
the midpoint for the error amplifier (VITH = 0.7V).
Note 4: Dynamic supply current is higher due to the internal gate charge
being delivered at the switching frequency.
Note 5: TJ is calculated from the ambient TA and power dissipation PD
according to the following formulas:
LTC3411AEDD: TJ = TA + (PD • 43°C/W)
LTC3411AEMS: TJ = TA + (PD • 120°C/W)
Note 6: For the DD package, switch on-resistance is sampled at wafer
level measurements and assured by design, characterization and
correlation with statistical process controls.
Note 7: 4MHz operation is guaranteed by design but not production
tested and is subject to duty cycle limitations (see Applications
Information).
Note 8: This IC includes overtemperature protection that is intended
to protect the device during momentary overload conditions. Junction
temperature will exceed 125°C when overtemperature protection is
active. Continuous operation above the specified maximum operating
junction temperature may impair device reliability.
3411afa
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