FEATURES
■ No Current Sense Resistors Required
■ Out-of-Phase Controllers Reduce Required
Input Capacitance
■ VOUT2 Tracks 1/2 VREF
■ Symmetrical Source/Sink Output Current
Capability (VOUT2)
■ Spread Spectrum Operation (When Enabled)
■ Wide VIN Range: 2.75V to 9.8V
■ Constant Frequency Current Mode Operation
■ 0.6V ±1.5% Voltage Reference (VOUT1)
■ Low Dropout Operation: 100% Duty Cycle
■ True PLL for Frequency Locking or Adjustment
■ Internal Soft-Start Circuitry
■ Power Good Output Voltage Monitor
■ Output Overvoltage Protection
■ Micropower Shutdown: IQ = 9µA
■ Tiny Low Profile (4mm × 4mm) QFN and Narrow
SSOP Packages
U
APPLICATIO S
■ DDR, DDR II and QDR Memory
■ SSTL, HSTL Termination Supplies
■ Servers, RAID Systems
■ Distributed DC Power Systems
LTC3776
Dual 2-Phase, No RSENSETM,
Synchronous Controller for
DDR/QDR Memory Termination
DESCRIPTIO
The LTC®3776 is a 2-phase dual output synchronous step-
down switching regulator controller for DDR/QDR memory
termination applications. The second controller regulates
its output voltage to 1/2 VREF while providing symmetrical
source and sink output current capability.
The No RSENSE constant frequency current mode architec-
ture eliminates the need for sense resistors and improves
efficiency. Power loss and noise due to the ESR of the
input capacitance are minimized by operating the two
controllers out of phase.
The switching frequency can be programmed up to 750kHz,
allowing the use of small surface mount inductors and ca-
pacitors. For noise sensitive applications, the LTC3776
switching frequency can be externally synchronized from
250kHz to 850kHz, or can be enabled for spread spectrum
operation. Forced continuous operation reduces noise and
RF interference. Soft-start for VOUT1 is provided internally
and can be extended using an external capacitor.
The LTC3776 is available in the tiny thermally enhanced
(4mm × 4mm) QFN package or 24-lead SSOP narrow
package.
, LTC and LT are registered trademarks of Linear Technology Corporation. Burst Mode
is a registered trademark of Linear Technology Corporation. No RSENSE is a trademark of
Linear Technology Corporation. All other trademarks are the property of their respective
owners. Protected by U.S. Patents including 5481178, 5929620, 6144194, 6580258,
6304066, 6611131, 6498466, patent pending on Spread Spectrum.
TYPICAL APPLICATIO
High Efficiency, 2-Phase, DDR Memory (VDDQ and VTT) Supplies
VIN
3.3V
VIN
SENSE1+ SENSE2+
10µF
×2
1.5µH
TG1
TG2
SW1
SW2
LTC3776
BG1
BG2
1.5µH
PGND
PGND
(VDDQ)VOUT1
2.5V
4A
187k
47µF
470pF
59k
VREF
VFB1
VFB2
ITH1
ITH2
SGND
15k
2200pF
6.2k
VOUT2 (VTT)
1.25V
±4A
47µF
3776 TA01a
Efficiency vs Load Current
100
90
80
70
60
50
40
30
20
10
0
10
FIGURE 14 CIRCUIT
CHANNEL 2 (VIN = 3.3V)
CHANNEL 1 (VIN = 5V)
CHANNEL 1 (VIN = 3.3V)
CHANNEL 2 (VIN = 5V)
100
1000
LOAD CURRENT (mA)
10000
3776 TA01b
3776f
1