5533 查看數據表（PDF） - Linear Technology

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5533

300MHz to 11GHz Precision Dual RF Power Detector

Linear Technology 

LTC5533

ABSOLUTE AXI U RATI GS

(Note 1)

VCC1, VCC2, VOUT1, VOUT2, VOS1, VOS2 ....... –0.3V to 6.5V

RFIN1, RFIN2 Voltage ........................(VCC ± 1.25V) to 7V

RFIN1, RFIN2 Power (RMS) ................................. 12dBm

SHDN1, SHDN2 Voltage to GND .. –0.3V to (VCC + 0.3V)

IVOUT1, IVOUT2 ........................................................ 5mA

Operating Temperature Range (Note 2) .. – 40°C to 85°C

Maximum Junction Temperature ......................... 125°C

Storage Temperature Range ................ – 65°C to 150°C

UW U

PACKAGE/ORDER I FOR ATIO

TOP VIEW

VCC1 1

VOUT1 2

VOS1 3

VCC2 4

VOUT2 5

VOS2 6

12 RFIN1

11 GND1

10 SHDN1

13

9 RFIN2

8 GND2

7 SHDN2

DE12 PACKAGE

12-LEAD (4mm × 3mm) PLASTIC DFN

TJMAX = 125°C, θJA = 40°C/W

EXPOSED PAD IS GND (PIN 13)

MUST BE SOLDERED TO PCB

ORDER PART

NUMBER

LTC5533EDE

DFN PART

MARKING

5533

Consult LTC Marketing for parts specified with wider operating temperature ranges.

ELECTRICAL CHARACTERISTICS The ● denotes the specifications which apply over the full operating

temperature range, otherwise specifications are at TA = 25°C. VCC = 3.6V, SHDN = VCC = HI, SHDN = 0V = LO, RF Input Signal is Off,

VOS = 0V and SHDN = HI unless otherwise noted. Limits below are for one channel unless otherwise noted.

PARAMETER

CONDITIONS

MIN TYP

MAX

UNITS

VCC Operating Voltage

IVCC Operating Current

IVCC Shutdown Current

VOUT Start Voltage (No RF Input)

IVOUT = 0mA

SHDN = LO

RLOAD = 2k, VOS = 0V

SHDN = LO

● 2.7

6

V

●

0.45

0.7

mA

●

0.01

2

µA

● 85 110 to 150 170

mV

1

mV

VOUT Output Current

VOUT Enable Time

VOUT Bandwidth

VOUT Load Capacitance

VOUT Slew Rate

VOUT Noise

VOUT Shutdown Resistance

VOS Voltage Range

VOS Input Current

SHDN Voltage, Chip Disabled

SHDN Voltage, Chip Enabled

SHDN Input Current

RFIN Input Frequency Range

RFIN Input Power Range

RFIN AC Input Resistance

RFIN Input Shunt Capacitance

Channel to Channel Isolation

VOUT = 1.75V, VCC = 2.7V, ∆VOUT < 10mV

●

SHDN = LO to HI, CLOAD = 33pF, RLOAD = 2k

●

CLOAD = 33pF, RLOAD = 2k (Note 4)

(Note 6)

●

VRFIN = 1V Step, CLOAD = 33pF, RLOAD = 2k (Note 3)

VCC = 3V, Noise BW = 1.5MHz, 50Ω RF Input Termination

Resistance Measured to Ground

●

VOS = 1V

●

VCC = 2.7V to 6V

●

VCC = 2.7V to 6V

●

SHDN = 3.6V

●

RF Frequency = 300MHz to 7GHz (Note 5, 6) VCC = 2.7V to 6V

f = 1000MHz, Pin = –25dBm

f = 1000MHz, Pin = –25dBm

f = 2GHz

2

4

8

20

2

33

3

1

280

0

1

– 0.5

0.5

0.35

1.4

22

36

300 to 11000

–32 to 12

220

0.65

45

mA

µs

MHz

pF

V/µs

mVP-P

Ω

V

µA

V

V

µA

MHz

dBm

Ω

pF

dB

Note 1: Absolute Maximum Ratings are those values beyond which the life

of a device may be impaired.

Note 2: Specifications over the –40°C to 85°C operating temperature

range are assured by design, characterization and correlation with

statistical process controls.

Note 3: The rise time at VOUT is measured between 1.3V and 2.3V.

Note 4: Bandwidth is calculated based on the 10% to 90% rise time

equation: BW = 0.35/rise time.

Note 5: RF performance is production tested at 1800MHz

Note 6: Guaranteed by design.

5533f

2

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