TC2054(2002) 查看數據表（PDF） - Microchip Technology

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TC2054
(Rev.:2002)

50 mA, 100 mA, and 150 mA CMOS LDOs with Shutdown and Error Output

Microchip Technology 

TC2054/2055/2186

1.0 ELECTRICAL

CHARACTERISTICS

ABSOLUTE MAXIMUM RATINGS*

Input Voltage .........................................................6.5V

Output Voltage................................(-0.3) to (VIN + 0.3)

Operating Temperature .................. -40°C < TJ< 125°C

Storage Temperature.......................... -65°C to +150°C

Maximum Voltage on Any Pin ........ VIN +0.3V to -0.3V

*Stresses above those listed under “Absolute Maxi-

mum Ratings” may cause permanent damage to the

device. These are stress ratings only and functional

operation of the device at these or any other conditions

above those indicated in the operation sections of the

specifications is not implied. Exposure to Absolute

Maximum Rating conditions for extended periods my

affect device reliability.

TC2054/2055/2186 ELECTRICAL SPECIFICATIONS

Electrical Characteristics: VIN = VR + 1V, IL = 100µA, CL = 3.3µF, SHDN > VIH, TA = 25°C, unless otherwise noted. BOLDFACE

type specifications apply for junction temperature of -40°C to +125°C.

Symbol

Parameter

Min

Typ

Max Units

Test Conditions

VIN

Input Operating Voltage

2.7

—

6.0

V Note 1

IOUTMAX

Maximum Output Current

50

—

100

—

—

mA TC2054

—

TC2055

150

—

—

TC2186

VOUT

TCVOUT

Output Voltage

VOUT Temperature

Coefficient

VR - 2.0%

—

—

VR ± 0.4%

20

40

VR + 2.0%

—

—

V Note 2

ppm/°C Note 3

∆VOUT/

∆VIN

∆VOUT/

VOUT

Line Regulation

Load Regulation

—

0.05

-1.5

0.5

-2.5

0.5

0.5

% (VR + 1V) < VIN < 6V

0.5

% TC2054;TC2055 IL = 0.1mA to IOUTMAX

0.5

TC2186

IL = 0.1mA to IOUTMAX

Note 4

VIN – VOUT Dropout Voltage, Note 5

—

2

—

mV

IL = 100µA

—

45

70

IL = 50mA

—

90

140

TC2015; TC2185 IL = 100mA

—

140

210

TC2185

IL = 150mA

Note 5

IIN

Supply Current

—

55

IINSD

Shutdown Supply Current

—

0.05

PSRR

Power Supply Rejection Ratio

—

50

IOUTSC

Output Short Circuit Current

160

∆VOUT∆PD Thermal Regulation

—

300

0.04

eN

Output Noise

—

600

80

µA SHDN = VIH, IL=0

0.5

µA SHDN = 0V

—

dB FRE ≤ 120kHz

—

mA VOUT = 0V

—

V/W Note 6

—

nV / IL = IOUTMAX, F = 10kHz

√Hz

tR

Response Time

(from Shutdown Mode)

—

60

—

µsec VIN = 4V

CIN = 1µF, COUT = 10µF

IL = 0.1mA, Note 9

Note 1: The minimum VIN has to meet two conditions: VIN = 2.7V and VIN = VR + VDROPOUT.

2: VR is the regulator output voltage setting. For example: VR = 1.8V, 2.7V, 2.8V, 2.85V, 3.0V, 3.3V.

3: TCVOUT = -(--V----O-----U-----T----M------A----X------–----V----O-----U-----T----M------I--N-----)---×-----1----0---6--

VOUT × ∆T

4: Regulation is measured at a constant junction temperature using low duty cycle pulse testing. Load regulation is tested over a

load range from 1.0mA to the maximum specified output current. Changes in output voltage due to heating effects are covered

by the thermal regulation specification.

5: Dropout voltage is defined as the input to output differential at which the output voltage drops 2% below its nominal value at a 1V

differential.

6: Thermal Regulation is defined as the change in output voltage at a time T after a change in power dissipation is applied, exclud-

ing load or line regulation effects. Specifications are for a current pulse equal to IMAX at VIN = 6V for T = 10msec.

7: The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable junction temperature

and the thermal resistance from junction-to-air (i.e. TA, TJ, θJA).

8: Hysteresis voltage is referenced by VR.

9: Time required for VOUT to reach 95% of VR (output voltage setting), after VSHDN is switched from 0 to VIN.

DS21663B-page 2

© 2002 Microchip Technology Inc.

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