M29W512B 查看數據表（PDF） - STMicroelectronics
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M29W512B Datasheet PDF : 18 Pages
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M29W512B
512 Kbit (64Kb x8, Bulk)
Low Voltage Single Supply Flash Memory
s SINGLE 2.7 to 3.6V SUPPLY VOLTAGE for
PROGRAM, ERASE and READ OPERATIONS
s ACCESS TIME: 55ns
s PROGRAMMING TIME
– 10µs per Byte typical
s PROGRAM/ERASE CONTROLLER
– Embedded Byte Program algorithm
– Embedded Chip Erase algorithm
– Status Register Polling and Toggle Bits
s UNLOCK BYPASS PROGRAM COMMAND
– Faster Production/Batch Programming
s LOW POWER CONSUMPTION
– Standby and Automatic Standby
s 100,000 PROGRAM/ERASE CYCLES
s 20 YEARS DATA RETENTION
– Defectivity below 1 ppm/year
s ELECTRONIC SIGNATURE
– Manufacturer Code: 20h
– Device Code: 27h
TSOP32 (NZ)
8 x 14mm
Figure 1. Logic Diagram
VCC
PLCC32 (K)
16
A0-A15
8
DQ0-DQ7
W
M29W512B
E
G
VSS
AI02743
March 2000
1/18
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