M29W512B 查看數據表（PDF） - STMicroelectronics

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M29W512B

512 Kbit (64Kb x8, Bulk) Low Voltage Single Supply Flash Memory

STMicroelectronics 

M29W512B

During the program operation the memory will ig-

nore all commands. It is not possible to issue any

command to abort or pause the operation. Typical

program times are given in Table 5. Bus Read op-

erations during the program operation will output

the Status Register on the Data Inputs/Outputs.

See the section on the Status Register for more

details.

After the program operation has completed the

memory will return to the Read mode, unless an

error has occurred. When an error occurs the

memory will continue to output the Status Regis-

ter. A Read/Reset command must be issued to re-

set the error condition and return to Read mode.

Note that the Program command cannot change a

bit set at ’0’ back to ’1’. The Chip Erase command

must be used to set all the bits in the memory from

’0’ to ’1’.

Unlock Bypass Command. The Unlock Bypass

command is used in conjunction with the Unlock

Bypass Program command to program the memo-

ry. When the access time to the device is long (as

with some EPROM programmers) considerable

time saving can be made by using these com-

mands. Three Bus Write operations are required

to issue the Unlock Bypass command.

Once the Unlock Bypass command has been is-

sued the memory will only accept the Unlock By-

pass Program command and the Unlock Bypass

Reset command. The memory can be read as if in

Read mode.

Unlock Bypass Program Command. The Un-

lock Bypass Program command can be used to

program one address in memory at a time. The

command requires two Bus Write operations, the

final write operation latches the address and data

in the internal state machine and starts the Pro-

gram/Erase Controller.

The Program operation using the Unlock Bypass

Program command behaves identically to the Pro-

gram operation using the Program command. The

operation cannot be aborted and the Status Reg-

ister is read. Errors must be reset using the Read/

Reset command, which leaves the device in Un-

lock Bypass Mode. See the Program command for

details on the behavior.

Unlock Bypass Reset Command. The Unlock

Bypass Reset command can be used to return to

Read/Reset mode from Unlock Bypass Mode.

Two Bus Write operations are required to issue the

Unlock Bypass Reset command.

Chip Erase Command. The Chip Erase com-

mand can be used to erase the memory. Six Bus

Write operations are required to issue the Chip

Erase Command and start the Program/Erase

Controller.

All Bus Read operations during the Chip Erase op-

eration will output the Status Register on the Data

Inputs/Outputs. See the section on the Status

Register for more details. Typical chip erase times

are given in Table 5.

After the Chip Erase operation has completed the

memory will return to the Read Mode, unless an

error has occurred. When an error occurs the

memory will continue to output the Status Regis-

ter. A Read/Reset command must be issued to re-

set the error condition and return to Read Mode.

The Chip Erase command sets all of the bits in the

memory to ’1’. All previous data is lost.

Table 5. Program, Erase Times and Program, Erase Endurance Cycles

(TA = 0 to 70°C)

Parameter

Min

Typ (1)

Typical after

100k W/E Cycles (1)

Max

Unit

Chip Erase (All bits in the memory set to ‘0’)

0.5

0.5

sec

Chip Erase

1

1

6

sec

Program

10

10

200

µs

Chip Program

0.7

0.7

4

sec

Program/Erase Cycles

100,000

cycles

Note: 1. TA = 25°C, VCC = 3.3V.

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