AS8F512K32 查看數據表（PDF） - Austin Semiconductor

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AS8F512K32

512K x 32 FLASH FLASH MEMORY ARRAY

Austin Semiconductor 

Austin Semiconductor, Inc.

FLASH

AS8F512K32

ELECTRICAL CHARACTERISTICS AND RECOMMENDED AC OPERATING CONDITIONS

(-55°C < TA < 125°C; VCC = 5V -5%/+10%)

Parameter

Symbol

Speed Options

JEDEC Std.

Parameter Description

Test Setup

-70 -90 -120 -150 Units

tAVAV

tRC

Read Cycle Time (Note 3)

CE\=VIL,

OE\=VIL

Min 70 90 120 150 ns

tAVQV tACC

Address to Output Delay

CE\=VIL,

OE\=VIL

Max 70 90 120 150 ns

tELQV

tCE

Chip Enable Low to Output Valid

Max 70 90 120 150 ns

tGLQV

tEHQZ

tGHQZ

tAXQX

tOE

Output Enable to Output Delay

tOEH

Output Enable Hold Time

Read

(Note 3)

Toggle and

Data\Polling

tHZ

Chip Enable High to Output High Z

(Note 2, 3)

tDF

Output Enable to Output High Z

(Note 2,3)

Output Hold Time from Addresses, CE\

tOH

or OE\, Whichever Occurs First

Max 30 35 50 55 ns

Min 0 0 0 0

ns

Min 10 10 10 10 ns

Max 20 20 30 35 ns

20 20 30 35 ns

Min 0 0 0 0

ns

NOTES:

1. See Test Specification for test conditions.

2. Output driver disable time.

3. Guaranteed but not Tested.

Addresses

CE\

OE\

WE\

Outputs

OV

Read Operation Timings

tRC

Addresses Stable

tACC

tOEH

High-Z

tCE

tDF

tCE

tOH

Output Valid

High-Z

AS8F512K32

Rev. 5.2 09/07

11

Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.

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