DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

M28010 查看數據表(PDF) - STMicroelectronics

零件编号
产品描述 (功能)
生产厂家
M28010 Datasheet PDF : 23 Pages
1 2 3 4 5 6 7 8 9 10 Next Last
M28010
Figure 2A. DIP Connections
Figure 2C. TSOP Connections
DU 1
A16 2
32 VCC
31 W
A15 3
30 DU
A12 4
29 A14
A7 5
28 A13
A6 6
27 A8
A5 7
26 A9
A4 8 M28010 25 A11
A3 9
24 G
A2 10
23 A10
A1 11
22 E
A0 12
21 DQ7
DQ0 13
20 DQ6
DQ1 14
19 DQ5
DQ2 15
18 DQ4
VSS 16
17 DQ3
AI02222
Note: 1. DU = Do Not Use
Figure 2B. PLCC Connections
A7
A6
A5
A4
A3 9
A2
A1
A0
DQ0
1 32
M28010
17
A14
A13
A8
A9
25 A11
G
A10
E
DQ7
Note: 1. DU = Do Not Use
AI02223
The device has been designed to offer a flexible
microcontroller interface, featuring both hardware
and software hand-shaking, with Data Polling and
Toggle Bit. The device supports a 128 byte Page
Write operation. Software Data Protection (SDP)
is also supported, using the standard JEDEC
algorithm.
The M28010 is designed for applications requiring
as much as 100,000 write cycles and ten years of
A11 1
32
A9
A8
A13
A14
DU
W
VCC 8
DU 9
M28010 25
24
A16
A15
A12
A7
A6
A5
A4 16
17
Note: 1. DU = Do Not Use
AI02224
G
A10
E
DQ7
DQ6
DQ5
DQ4
DQ3
VSS
DQ2
DQ1
DQ0
A0
A1
A2
A3
data retention. The organization of the data in a 4
byte (32-bit) “word” format leads to significant
savings in power consumption. Once a byte has
been read, subsequent byte read cycles from the
same “word” (with addresses differing only in the
two least significant bits) are fetched from the
previously loaded Read Buffer, not from the
memory array. As a result, the power consumption
for these subsequent read cycles is much lower
than the power consumption for the first cycle. By
careful design of the memory access patterns, a
50% reduction in the power consumption is
possible.
SIGNAL DESCRIPTION
The external connections to the device are
summarized in Table 1, and their use in Table 3.
Addresses (A0-A16). The address inputs are
used to select one byte from the memory array
during a read or write operation.
Data In/Out (DQ0-DQ7). The contents of the data
byte are written to, or read from, the memory array
through the Data I/O pins.
Chip Enable (E). The chip enable input must be
held low to enable read and write operations.
When Chip Enable is high, power consumption is
reduced.
Output Enable (G). The Output Enable input
controls the data output buffers, and is used to
initiate read operations.
2/23

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]