ILX510 查看數據表（PDF） - Sony Semiconductor
零件编号
产品描述 (功能)
生产厂家
ILX510 Datasheet PDF : 15 Pages
| |||
ILX510
Electrooptical Characteristics (Note 1)
(Ta = 25 °C, VDD = 12 V, Data rate fφR=2 MHz, Simultaneous output, Input clock =5 Vp-p
Light source = 3200 K, IR cut filter CM-500S (t = 1.0 mm)
Item
Symbol Min.
Typ. Max.
Unit Remarks
Sensitivity 1
Sensitivity 2
Sensitivity nonuniformity
R1
9
12
15 V/(lx • s) Note2
R2
—
27.4
— V/(lx • s) Note3
PRNU
—
4
10
%
Note4
Saturation output voltage
VSAT
1.0
1.5
—
V
Note5
Saturation exposure
Register imbalance
SE
0.067 0.125
—
RI
—
2
7
lx • s
%
Note6
Note7
Dark voltage average
VDRK
—
0.3
2.0
mV Note8
Dark signal nonuniformity
DSNU
—
0.6
3.0
mV Note9
Image lag
IL
—
0.02
—
% Note10
Supply current
IVDD
—
30
60
mA
—
Total transfer efficiency
TTE
92
98
—
%
—
Output impedance
ZO
—
150
—
Ω
—
Offset level
VOS
—
6.5
—
V
Note11
Dynamic range
DR
500
5000
—
— Note12
Note
1) In accordance with the given electrooptical characteristics, the even black level is defined as the average
value of D6, D8 to D24. The odd black level is defined as the average value of D5, D7 to D23.
2) For the sensitivity test light is applied with a uniform intensity of illumination.
3) W lamp (2854 K).
4) PRNU is defined as indicated below. Ray incidence conditions are the same as for Note 2.
VOUT=500 mV (Typ.)
PRNU = (VMAX – VMIN)/2 ×100 (%)
VAVE
Where the 5150 pixels are divided into blocks of 103, even and odd pixels, respectively. The maximum
output of each block is set to VMAX, the minimum output to VMIN and the average output to VAVE.
5) Use below the minimum value of the saturation output voltage.
6) Saturation exposure is defined as follows. SE = VSAT
R1
7) RI is defined as indicated below. VOUT=500 mV (Typ.)
VODD-AVE – VEVEN-AVE
RI =
×100 (%)
( ) VODD-AVE + VEVEN-AVE
2
Where average of odd pixels output is set to VODD-AVE, even pixels to VEVEN-AVE.
—3—
Share Link: 