Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits
English
한국어
日本語
русский
简体中文
español
零件编号
产品描述 (功能)
P4C1024L 查看數據表(PDF) - Performance Semiconductor
零件编号
产品描述 (功能)
生产厂家
P4C1024L
LOW POWER 128K x 8 CMOS STATIC RAM
Performance Semiconductor
P4C1024L Datasheet PDF : 8 Pages
1
2
3
4
5
6
7
8
AC CHARACTERISTICS - WRITE CYCLE
(Over Recommended Operating Temperature & Supply Voltage)
Symbol
Parameter
-55
Min
Max
t
WC
Write Cycle Time
55
t
CW
Chip Enable Time
50
to End of Write
t
AW
Address Valid to
50
End of Write
t
AS
Address Set-up
0
Time
t
WP
Write Pulse Width
40
t
AH
Address Hold
0
Time
t
DW
Data Valid to End
25
of Write
t
Data Hold Time
0
DH
t
WZ
Write Enable to
25
Output in High Z
t
Output Active from
OW
5
End of Write
-70
Min
Max
70
60
60
0
50
0
30
0
30
5
P4C1024L
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
WRITE CYCLE NO. 1 (
WE
CONTROLLED)
(6)
ADDRESS
CE
1
CE
2
WE
DATA IN
(7)
DATA OUT
(9)
tWC
t
CW
tAW
tWP
tAH
tAS
DATA UNDEFINED
tWZ
(4)
tDW
DATA VALID
tDH
tOW
(4,7)
HIGH IMPEDANCE
Notes:
6.
CE
1
and
WE
are
LOW
and
CE
2
is
HIGH
for
WRITE
cycle.
7.
OE
is LOW for this WRITE cycle to show twz and tow.
8.
If
CE
1
goes
HIGH
or
CE
2
goes
LOW
simultaneously
with
WE
HIGH,
the
output
remains
in
a
high
impedance
state.
9. Write Cycle Time is measured from the last valid address to the first transitioning address.
155
Share Link:
datasheetq.com [
Privacy Policy
]
[
Request Datasheet
] [
Contact Us
]