4364 查看數據表（PDF） - M.S. Kennedy
零件编号
产品描述 (功能)
生产厂家
4364 Datasheet PDF : 7 Pages
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ABSOLUTE MAXIMUM RATINGS
V+
VIN
+Vcc
-Vcc
VLOGIC
IOUT
IPK
θJC
High Voltage Supply 55V ○
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Current Command Input ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ±13.5V
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○ +16V
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○ -18V
Logic Input ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ -0.2V to REFOUT
Continuous Output Current ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ 5A
Peak Output Current 10A ○
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Thermal Resistance @ 25°C
(Junction To Case) ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ 11°C/W
TST Storage Temperature Range ○ ○ ○ ○ ○ ○ ○ ○ -65°C to +150°C
TLD Lead Temperature Range ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ +300°C
(10 Seconds)
TC Case Operating Temperature ○ ○ ○ ○ ○ ○ ○ -55°C to +125°C
TJ
Junction Temperature
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○ +150°C
ELECTRICAL SPECIFICATIONS
Parameter
Test Conditions
Group A
Subgroup
45
POWER SUPPLY REQUIREMENTS
+Vcc
@ +15V
1,2,3
-Vcc
@ -15V
1,2,3
PWM
4
Free Running Frequency
5,6
CONTROL
Transconductance 7
±5 Amps Output
4,5,6
Current Monitor 7
±5 Amps Output
4,5,6
Output Offset
4
@ 0 Volts Command
5,6
HALL INPUTS
Low Level Input Voltage 1
-
High Level Input Voltage 1
-
ERROR AMP
Input Voltage Range 1
-
Slew Rate 1
-
Output Voltage Swing 1
-
Gain Bandwidth Product 1
-
Large Signal Voltage Gain 1
-
OUTPUT
Rise Time 1
-
Fall Time 1
-
Leakage Current 1
@ 44V, +150°C Junction
-
Voltage Drop Across Bridge (1 Upper and 1 Lower) 1
@ 5 Amps
-
Voltage Drop Across Bridge (1 Upper and 1 Lower) 1 @ 5 Amps, +150°C Junction
-
Drain-Source On Resistance (Each MOSFET) 6
@ 5 Amps, 150°C Junction
-
Diode VSD 1
@ 5 Amps, Each FET
-
trr 1
IF=5 Amps, di/dt=100A/µS
-
Dead Time 1
-
REFERENCE
Refout
15mA Load
1,2,3
LOGIC INPUTS (HALL A,B,C,BRAKE,60°/120°,DIS)
VIL 1
-
VIH 1
-
All Ratings: Tc=+25°C Unless Otherwise Specified
MSK 4364H/E 3
Min. Typ. Max.
MSK 4364 2
Min. Typ. Max.
Units
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60
85
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30
40
-
60
85
mA
-
30
40
mA
21
22
23
20
22
18.7
-
25.3
-
-
24
KHz
-
KHz
0.95
1
1.05
0.9
1
1.1 Amp/Volt
0.9
1
1.1
0.9
1
1.1 V/Amp
-
±5.0 ±25.0
-
±5.0 ±35.0 mAmp
-
-
±50.0
-
-
-
mAmp
-
-
0.8
-
-
0.8
Volts
3.0
-
-
3.0
-
-
Volts
±11 ±12
-
6.5
8
-
±12 ±13
-
-
6.5
-
175
275
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±11
6.5
±12
-
175
±12
8
±13
6.5
275
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Volts
-
V/µSec
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Volts
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MHz
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V/mV
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100
-
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100
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nSec
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100
-
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100
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nSec
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-
750
-
-
750 µAmps
-
-
0.6
-
-
0.6
Volts
-
-
1.2
-
-
1.2
Volts
-
-
0.10
-
-
0.10
Ω
-
-
1.6
-
-
1.6
Volts
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280
-
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280
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nSec
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2
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2
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µSec
5.82
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6.57
5.82
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6.57 Volts
-
-
0.8
-
-
0.8
Volts
3.0
-
-
3.0
-
-
Volts
NOTES:
1 Guaranteed by design but not tested. Typical parameters are representative of actual device
performance but are for reference only.
2 Industrial grade and 'E' suffix devices shall be tested to subgroups 1 and 4 unless otherwise specified.
3 Military grade devices ("H" Suffix) shall be 100% tested to Subgroups 1, 2, 3 and 4.
4 Subgroups 5 and 6 testing available upon request.
5 Subgroup 1, 4 TA = TC = +25°C
2, 5 TA = TC = +125°C
3, 6 TA = TC = -55°C
6 This is to be used for MOSFET thermal calculation only.
7 Measurements do not include offset current at 0V current command.
2
Rev. B 3/02
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