M36W108AB 查看數據表（PDF） - STMicroelectronics

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M36W108AB

8 Mbit (1Mb x8, Boot Block) Flash Memory and 1 Mbit (128Kb x8) SRAM Low Voltage Multi-Memory Product

STMicroelectronics 

M36W108AT, M36W108AB

Write. Write operations are used to give Instruc-

tion Commands to the memory or to latch input

data to be programmed. A write operation is initi-

ated when Chip Enable (EF) is Low and Write En-

able (W) is at VIL with Output Enable (G) at VIH.

Addresses are latched on the falling edge of W or

EF whichever occurs last. Commands and Input

Data are latched on the rising edge of W or EF

whichever occurs first.

Output Disable. The data outputs are high im-

pedance when the Output Enable (G) is at VIH with

Write Enable (W) at VIH.

Standby. The memory is in standby when Chip

Enable (EF) is at VIH and the P/E.C. is idle. The

power consumption is reduced to the standby level

and the outputs are high impedance, independent

of the Output Enable (G) or Write Enable (W) in-

puts.

Automatic Standby. After 150ns of bus inactivity

and when CMOS levels are driving the addresses,

the chip automatically enters a pseudo-standby

mode where consumption is reduced to the CMOS

standby value, while outputs still drive the bus.

Instructions and Commands

Seven instructions are defined (see Table 7) to

perform Read Array, Auto Select (to read the Elec-

tronic Signature), Program, Block Erase, Chip

Erase, Erase Suspend and Erase Resume. The

internal P/E.C. automatically handles all timing

and verification of the Program and Erase opera-

tions. The Status Register Data Polling, Toggle,

Error bits and the RB output may be read at any

time, during programming or erase, to monitor the

progress of the operation.

Instructions, made up of commands written in cy-

cles, can be given to the Program/Erase Controller

through a Command Interface (C.I.).

The C.I. latches commands written to the memory.

Commands are made of address and data se-

quences. Two coded cycles unlock the Command

Interface. They are followed by an input command

or a confirmation command. The coded sequence

consists of writing the data AAh at the address

5555h during the first cycle and the data 55h at the

address 2AAAh during the second cycle.

Table 6. Flash User Bus Operations (1)

Operation

EF

G

W RP A15 A12 A9 A6 A1 A0

DQ7-DQ0

Read Byte

VIL VIL VIH VIH A15 A12 A9 A6 A1 A0 Data Output

Write Byte

VIL VIH VIL VIH A15 A12 A9 A6 A1 A0

Data Input

Output Disable

VIL VIH VIH VIH

X

X

X

X

X

X

Hi-Z

Stand-by

VIH

X

X

VIH

X

X

X

X

X

X

Hi-Z

Reset

X

X

X

VIL

X

X

X

X

X

X

Hi-Z

Note: 1. X = VIL or VIH.

Table 7. Read Flash Electronic Signature

Code

Device

EF

G

W

A1

A0

Other

Addresses

DQ7-DQ0

Manufact. Code

VIL

VIL

VIH

VIL

VIL

Don’t care

20h

Device Code

M36W108AT VIL

VIL

VIH

VIL

VIH

Don’t care

D2h

M36W108AB VIL

VIL

VIH

VIL

VIH

Don’t care

DCh

7/36

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