M36W108T100ZM1 查看數據表（PDF） - STMicroelectronics
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M36W108T100ZM1
8 Mbit (1Mb x8, Boot Block) Flash Memory and 1 Mbit (128Kb x8) SRAM Low Voltage Multi-Memory Product
STMicroelectronics
M36W108T100ZM1 Datasheet PDF : 35 Pages
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M36W108T, M36W108B
Figure 2. LBGA and LGA Connections (Top View)
1
2
3
4
5
6
A
W
A14
A11
G
A10
E1S
B
VCCS
A18
A8
DQ7
DQ5
VSS
C
A17
NC
A5
DQ4
DQ2
DQ1
D
VSS
EF
NC
DQ0
A0
A1
E
NC
NC
DQ3
A6
A3
A2
F
NC
VCCF
NC
A19
A7
A4
G
NC
DQ6
A13
RP
RB
E2S
H
NC
A12
NC
A16
A15
A9
Table 1. Signal Names
A0-A16
Address Inputs
A17-A19
Address Inputs for Flash Chip
DQ0-DQ7
Data Input/Outputs, Command Inputs
for Flash Chip
EF
Chip Enable for Flash Chip
E1S, E2S
Chip Enable for SRAM Chip
G
Output Enable
W
Write Enable
RP
Reset for Flash Chip
RB
Ready/Busy Output for Flash Chip
VCCF
Supply Voltage for Flash Chip
VCCS
Supply Voltage for SRAM Chip
VSS
Ground
2/35
AI02508
DESCRIPTION
The M36W108 is multi-chip device containing an
8 Mbit boot block Flash memory and a 1 Mbit of
SRAM. The device is offered in the new Chip
Scale Package solutions: LBGA48 1.0 mm ball
pitch and LGA48 1.0 mm land pitch.
The two components, of the package’s overall 9
Mbit of memory, are distinguishable by use of the
three chip enable lines: EF for the Flash memory,
E1S and E2S for the SRAM.
The Flash memory component is identical with the
M29W008 device. It is a non-volatile memory that
may be erased electrically at the block or chip level
and programmed in-system on a Byte-by-Byte ba-
sis using only a single 2.7V to 3.6V VCCF supply.
For Program and Erase operations the necessary
high voltages are generated internally. The device
can also be programmed in standard program-
mers. The array matrix organization allows each
block to be erased and reprogrammed without af-
fecting other blocks.
Instructions for Read/Reset, Auto Select for read-
ing the Electronic Signature, Programming, Block
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