M36W108T100ZM1 查看數據表（PDF） - STMicroelectronics

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M36W108T100ZM1

8 Mbit (1Mb x8, Boot Block) Flash Memory and 1 Mbit (128Kb x8) SRAM Low Voltage Multi-Memory Product

STMicroelectronics 

M36W108T, M36W108B

Table 8. Flash Commands

Hex Code

Command

00h

Invalid/Reserved

10h

Chip Erase Confirm

20h

Reserved

30h

Block Erase Resume/Confirm

80h

Set-up Erase

90h

Read Electronic Signature/

Block Protection Status

A0h

Program

B0h

Erase Suspend

F0h

Read Array/Reset

Instructions are composed of up to six cycles. The

first two cycles input a Coded Sequence to the

Command Interface which is common to all in-

structions (see Table 9). The third cycle inputs the

instruction set-up command. Subsequent cycles

output the addressed data or Electronic Signature

for Read operations. In order to give additional

data protection, the instructions for Program and

Block or Chip Erase require further command in-

puts. For a Program instruction, the fourth com-

mand cycle inputs the address and data to be

programmed. For an Erase instruction (block or

chip), the fourth and fifth cycles input a further

Coded Sequence before the Erase confirm com-

mand on the sixth cycle. Erasure of a memory

block may be suspended, in order to read data

from another block or to program data in another

block, and then resumed.

When power is first applied or if VCCF falls below

VLKO, the command interface is reset to Read Ar-

ray.

Command sequencing must be followed exactly.

Any invalid combination of commands will reset

the device to Read Array. The increased number

of cycles has been chosen to assure maximum

data security.

Read/Reset (RD) Instruction. The Read/Reset

instruction consists of one write cycle giving the

command F0h. It can be optionally preceded by

the two Coded cycles. Subsequent read opera-

tions will read the memory array addressed and

output the data read. A wait state of tPLYH is nec-

essary after Read/Reset prior to any valid read if

the memory was in an Erase or Program mode

when the RD instruction is given (see Table 17

and Figure 9).

Auto Select (AS) Instruction. This instruction

uses the two Coded cycles followed by one write

cycle giving the command 90h to address 5555h

for command set-up. A subsequent read will out-

put the Manufacturer Code or the Device Code

(Electronic Signature) depending on the levels of

A0 and A1 (see Table 7). The Electronic Signature

can be read from the memory allowing program-

ming equipment or applications to automatically

match their interface to the characteristics of the

Flash memory. The Manufacturer Code, 20h, is

output when the addresses lines A0 and A1 are at

VIL, the Device Code is output when A0 is at VIH

with A1 at VIL. Other address inputs are ignored.

Program (PG) Instruction. This instruction uses

four write cycles. The Program command A0h is

written to address 5555h on the third cycle after

two Coded Cycles. A fourth write operation latch-

es the Address and the Data to be written and

starts the P/E.C. Read operations output the Sta-

tus Register bits after the programming has start-

ed. Memory programming is made only by writing

’0’ in place of ’1’. Status bits DQ6 and DQ7 deter-

mine if programming is on-going and DQ5 allows

verification of any possible error. Programming at

an address not in blocks being erased is also pos-

sible during erase suspend. In this case, DQ2 will

toggle at the address being programmed.

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