IC62LV1008LL-100D 查看數據表（PDF） - Integrated Circuit Solution Inc

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IC62LV1008LL-100D

1 M x 8 bit Low Voltage and Ultra Low Power CMOS Static RAM

Integrated Circuit Solution Inc 

IC62LV1008L

IC62LV1008LL

ABSOLUTE MAXIMUM RATINGS(1)

Symbol Parameter

Value

Unit

VTERM Terminal Voltage with Respect to GND –0.5 to Vcc + 0.5 V

VCC

Vcc related to GND

–0.3 to +4.0

V

TBIAS

Temperature Under Bias

–40 to +85

°C

TSTG

Storage Temperature

–65 to +150

°C

PT

Power Dissipation

1

W

Notes:

1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the

device. This is a stress rating only and functional operation of the device at these or any other conditions above

those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating

conditions for extended periods may affect reliability.

CAPACITANCE(1)(2)

Symbol

Parameter

Conditions

Max.

Unit

CIN

Input Capacitance

VIN = 0V

6

pF

COUT

Output Capacitance

VOUT = 0V

8

pF

Notes:

1. Tested initially and after any design or process changes that may affect these parameters.

2. Test conditions: TA = 25oC, f = 1 MHz, VCC = 3.0 V

DC ELECTRICAL CHARACTERISTICS (Over Operating Range)

Symbol Parameter

Test Conditions

VOH

Output HIGH Voltage VCC = Min., IOH = –1.0 mA

VOL

Output LOW Voltage

VCC = Min., IOL = 2.1 mA

VIH

Input HIGH Voltage(1)

VIL

Input LOW Voltage(2)

ILI

Input Leakage

GND ≤ VIN ≤ VCC

ILO

Output Leakage

GND ≤ VOUT ≤ VCC

Notes:

1. VIH(max.) = VCC +2.0V for pulse width less than 10 ns.

1. VIL(min.) = –2.0V for pulse width less than 10 ns.

Min.

Max.

Unit

2.0

—

V

—

0.4

V

2.2 VCC + 0.3 V

–0.2

0.4

V

–1

1

µA

–1

1

µA

4

Integrated Circuit Solution Inc.

LPSR015-0A 1/3/2001

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