M464S1654ETS 查看數據表（PDF） - Samsung

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M464S1654ETS

SDRAM Unbuffered SODIMM 144pin Unbuffered SODIMM based on 256Mb E-die 64-bit Non ECC

Samsung 

128MB, 256MB, 512MB Unbuffered SODIMM

DC CHARACTERISTICS

M464S3254ETS (32M x 64, 256MB Module)

(Recommended operating condition unless otherwise noted, TA = 0 to 70°C)

Parameter

Symbol

Test Condition

Operating current

(One bank active)

Precharge standby current

in power-down mode

Precharge standby current

in non power-down mode

Active standby current in

power-down mode

Active standby current in

non power-down mode

(One bank active)

Operating current

(Burst mode)

Refresh current

Self refresh current

ICC1

ICC2P

ICC2PS

ICC2N

ICC2NS

ICC3P

ICC3PS

ICC3N

ICC3NS

ICC4

ICC5

ICC6

Burst length = 1

tRC ≥ tRC(min)

IO = 0 mA

CKE ≤ VIL(max), tCC = 10ns

CKE & CLK ≤ VIL(max), tCC =∞

CKE ≥ VIH(min), CS ≥ VIH(min), tCC = 10ns

Input signals are changed one time during 20ns

CKE ≥ VIH(min), CLK ≤ VIL(max), tCC =∞

Input signals are stable

CKE ≤ VIL(max), tCC = 10ns

CKE & CLK ≤ VIL(max), tCC =∞

CKE ≥ VIH(min), CS ≥ VIH(min), tCC = 10ns

Input signals are changed one time during 20ns

CKE ≥ VIH(min), CLK ≤ VIL(max), tCC =∞

Input signals are stable

IO = 0 mA

Page burst

4Banks activated

tCCD = 2CLKs

tRC ≥ tRC(min)

C

CKE ≤ 0.2V

L

Notes : 1. Measured with outputs open.

2. Refresh period is 64ms.

3. Unless otherwise noted, input swing level is CMOS(VIH/VIL=VDDQ/VSSQ)

Version

7A

460

16

16

160

80

50

50

200

200

620

820

24

12

SDRAM

Unit

Note

mA

1

mA

mA

mA

mA

mA

mA

1

mA

2

mA

mA

Rev. 1.5 May 2004

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