M464S1654ETS 查看數據表（PDF） - Samsung
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M464S1654ETS Datasheet PDF : 18 Pages
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128MB, 256MB, 512MB Unbuffered SODIMM
ABSOLUTE MAXIMUM RATINGS
Parameter
Voltage on any pin relative to Vss
Voltage on VDD supply relative to Vss
Storage temperature
Power dissipation
Short circuit current
Symbol
VIN, VOUT
VDD, VDDQ
TSTG
PD
IOS
Value
-1.0 ~ 4.6
-1.0 ~ 4.6
-55 ~ +150
1.0 * # of component
50
Note : Permanent device damage may occur if "ABSOLUTE MAXIMUM RATINGS" are exceeded.
Functional operation should be restricted to recommended operating condition.
Exposure to higher than recommended voltage for extended periods of time could affect device reliability.
SDRAM
Unit
V
V
°C
W
mA
DC OPERATING CONDITIONS AND CHARACTERISTICS
Recommended operating conditions (Voltage referenced to VSS = 0V, TA = 0 to 70°C)
Parameter
Supply voltage
Input high voltage
Input low voltage
Output high voltage
Output low voltage
Input leakage current
Symbol
Min
VDD
3.0
VIH
2.0
VIL
-0.3
VOH
2.4
VOL
-
ILI
-10
Typ
Max
Unit
3.3
3.6
V
3.0
VDDQ+0.3
V
0
0.8
V
-
-
V
-
0.4
V
-
10
uA
Notes : 1. VIH (max) = 5.6V AC.The overshoot voltage duration is ≤ 3ns.
2. VIL (min) = -2.0V AC. The undershoot voltage duration is ≤ 3ns.
3. Any input 0V ≤ VIN ≤ VDDQ.
Input leakage currents include Hi-Z output leakage for all bi-directional buffers with Tri-State outputs.
Note
1
2
IOH = -2mA
IOL = 2mA
3
CAPACITANCE (VDD = 3.3V, TA = 23°C, f = 1MHz, VREF = 1.4V ± 200 mV)
Parameter
M464S1654ETS M464S3254ETS M464S6453EN0
Symbol
Unit
Min
Max
Min
Max
Min
Max
Input capacitance (A0 ~ A12, BA0 ~ BA1)
CIN1
15
25
25
45
45
90
pF
Input capacitance (RAS, CAS, WE)
CIN2
15
25
25
45
45
90
pF
Input capacitance (CKE0 ~ CKE1)
CIN3
15
25
15
25
25
45
pF
Input capacitance (CLK0 ~ CLK1)
CIN4
15
21
15
21
15
21
pF
Input capacitance (CS0 ~ CS1)
CIN5
15
25
15
25
15
25
pF
Input capacitance (DQM0 ~ DQM7)
CIN6
10
12
10
12
10
15
pF
Data input/output capacitance (DQ0 ~ DQ63) COUT
10
12
10
12
13
18
pF
Rev. 1.5 May 2004
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