M470L3224BT0 查看數據表（PDF） - Samsung

零件编号

产品描述 (功能)

生产厂家

M470L3224BT0

256MB DDR SDRAM MODULE

Samsung 

M470L3224BT0

200pin DDR SDRAM SODIMM

AC OPERATING TEST CONDITIONS (VDD=2.5V, VDDQ=2.5V, TA= 0 to 70°C)

Parameter

Input reference voltage for Clock

Value

0.5 * VDDQ

Input signal maximum peak swing

1.5

Input Levels(VIH/VIL)

VREF+0.31/VREF-0.31

Input timing measurement reference level

VREF

Output timing measurement reference level

Vtt

Output load condition

See Load Circuit

Unit

Note

V

V

V

V

V

Output

Vtt=0.5*VDDQ

RT=50Ω

Z0=50Ω

CLOAD=30pF

VREF

=0.5*VDDQ

Output Load Circuit (SSTL_2)

Input/Output CAPACITANCE (VDD=2.5V, VDDQ=2.5V, TA= 25°C, f=1MHz)

Parameter

Symbol

Min

Max

Unit

Input capacitance(A0 ~ A11, BA0 ~ BA1,RAS,CAS, WE )

CIN1

36

44

pF

Input capacitance(CKE0)

CIN2

36

44

pF

Input capacitance( CS0, CS1)

CIN3

26

30

pF

Input capacitance( CLK0, CLK1)

CIN4

34

38

pF

Data & DQS input/output capacitance(DQ0~DQ63)

COUT

12

14

pF

Input capacitance(DM0~DM8)

CIN5

12

14

pF

Rev. 0.1 June. 2001

Share Link: