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M48T512V 查看數據表(PDF) - STMicroelectronics

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M48T512V Datasheet PDF : 21 Pages
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M48T512Y, M48T512V*
OPERATING MODES
The 32-pin, 600mil DIP Hybrid houses a controller
chip, SRAM, quartz crystal, and a long life lithium
button cell in a single package. Figure
11., page 15 illustrates the static memory array
and the quartz controlled clock oscillator. The
clock locations contain the year, month, date, day,
hour, minute, and second in 24 hour BCD format.
Corrections for 28, 29 (leap year - compliant until
the year 2100), 30, and 31 day months are made
automatically. Byte 7FFF8h is the clock control
register (see Table 5., page 11). This byte controls
user access to the clock information and also
stores the clock calibration setting. The seven
clock bytes (7FFFFh-7FFF9h) are not the actual
clock counters, they are memory locations consist-
ing of BiPORT™ READ/WRITE memory cells
within the static RAM array. The M48T512Y/V in-
cludes a clock control circuit which updates the
clock bytes with current information once per sec-
ond. The information can be accessed by the user
in the same manner as any other location in the
static memory array. The M48T512Y/V also has its
own Power-Fail Detect circuit. This control circuitry
constantly monitors the supply voltage for an out
of tolerance condition. When VCC is out of toler-
ance, the circuit write protects the TIMEKEEPER
register data and SRAM, providing data security in
the midst of unpredictable system operation. As
VCC falls, the control circuitry automatically switch-
es to the battery, maintaining data and clock oper-
ation until valid power is restored.
Table 2. Operating Modes
Mode
VCC
E
G
Deselect
VIH
X
WRITE
READ
4.5 to 5.5V
or
3.0 to 3.6V
VIL
X
VIL
VIL
READ
VIL
VIH
Deselect
VSO to VPFD (min)(1)
X
X
Deselect
VSO(1)
X
X
Note: X = VIH or VIL; VSO = Battery Back-up Switchover Voltage.
1. See Table 10., page 17 for details.
W
DQ0-DQ7
X
High Z
VIL
DIN
VIH
DOUT
VIH
High Z
X
High Z
Power
Standby
Active
Active
Active
CMOS Standby
X
High Z Battery Back-up Mode
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