M48Z129VPM 查看數據表（PDF） - STMicroelectronics

零件编号

产品描述 (功能)

生产厂家

M48Z129VPM

3.3V/5V 1 Mbit (128Kb x8) ZEROPOWER® SRAM

STMicroelectronics 

M48Z129Y, M48Z129V

Table 7. Power Down/Up Trip Points DC Characteristics (1)

(TA = 0 to 70 °C)

Symbol

Parameter

Min

Power-fail Deselect Voltage (M48Z129Y)

4.2

VPFD

Power-fail Deselect Voltage (M48Z129V)

2.7

Battery Back-up Switchover Voltage (M48Z129Y)

VSO

Battery Back-up Switchover Voltage (M48Z129V)

tDR (2) Expected Data Retention Time

10

Note: 1. All voltages referenced to VSS.

2. At 25 °C.

Typ

4.35

2.9

3.0

2.45

Max

Unit

4.5

V

3.0

V

YEARS

Table 8. Power Down/Up AC Characteristics

(TA = 0 to 70 °C)

Symbol

Parameter

Min

Max

Unit

tF (1)

VPFD (max) to VPFD (min) VCC Fall Time

300

µs

tFB (2)

VPFD (min) to VSS VCC Fall Time (M48Z129Y)

VPFD (min) to VSS VCC Fall Time (M48Z129V)

10

µs

150

tR

VPFD (min) to VPFD (max) VCC Rise Time

10

µs

tRB

tWPT

VSS to VPFD (min) VCC Rise Time

Write Protect Time (M48Z129Y)

Write Protect Time (M48Z129V)

1

µs

40

150

µs

40

250

tREC

VPFD (max) to RST High

40

200

ms

Note: 1. VPFD (max) to VPFD (min) fall time of less than tF may result in deselection/write protection not occurring until 200µs after VCC pass-

es VPFD (min).

2. VPFD (min) to VSS fall time of less than tFB may cause corruption of RAM data.

6/13

Share Link: