M48Z58-70MH1 查看數據表（PDF） - STMicroelectronics
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M48Z58-70MH1 Datasheet PDF : 17 Pages
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M48Z58, M48Z58Y
Table 5. Capacitance (1, 2)
(TA = 25 °C)
Symbol
Parameter
Test Condition
Min
Max
Unit
CIN
Input Capacitance
VIN = 0V
CIO (3)
Input / Output Capacitance
VOUT = 0V
Notes: 1. Effective capacitance measured with power supply at 5V.
2. Sampled only, not 100% tested.
3. Outputs deselected.
10
pF
10
pF
Table 6. DC Characteristics
(TA = 0 to 70°C or –40 to 85°C; VCC = 4.75V to 5.5V or 4.5V to 5.5V)
Symbol
Parameter
Test Condition
Min
Max
Unit
ILI
Input Leakage Current
ILO
Output Leakage Current
0V ≤ VIN ≤ VCC
0V ≤ VOUT ≤ VCC
±1
µA
±5
µA
ICC
Supply Current
ICC1
Supply Current (Standby) TTL
Outputs open
E = VIH
50
mA
3
mA
ICC2
Supply Current (Standby) CMOS
E = VCC – 0.2V
3
mA
VIL
Input Low Voltage
VIH
Input High Voltage
VOL
Output Low Voltage
IOL = 2.1mA
–0.3
0.8
V
2.2
VCC + 0.3
V
0.4
V
VOH
Output High Voltage
IOH = –1mA
2.4
V
Table 7. Power Down/Up Trip Points DC Characteristics (1)
(TA = 0 to 70°C or –40 to 85°C)
Symbol
Parameter
Min
Typ
Max
Unit
VPFD
Power-fail Deselect Voltage (M48Z58/58Y)
4.5
4.6
4.75
V
VPFD
Power-fail Deselect Voltage (M48Z58/58YY)
4.2
4.35
4.5
V
VSO
Battery Back-up Switchover Voltage
tDR (2)
Expected Data Retention Time
Notes: 1. All voltages referenced to VSS.
2. At 25 °C
3.0
10
V
YEARS
DESCRIPTION (cont’d)
For the 28 lead SOIC, the battery package (i.e.
SNAPHAT) part number is "M4Z28-BR00SH1".
The M48Z58/58Y also has its own Power-fail De-
tect circuit. The control circuitry constantly monitors
the single 5V supply for an out of tolerance condi-
tion. When VCC is out of tolerance, the circuit write
protects the SRAM, providing a high degree of data
security in the midst of unpredictable system op-
eration brought on by low VCC. As VCC falls below
approximately 3V, the control circuitry connects the
battery which maintains data until valid power re-
turns.
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