M58BF008ZA 查看數據表（PDF） - STMicroelectronics

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M58BF008ZA

8 Mbit (256Kb x32, Burst) Flash Memory

STMicroelectronics 

M58BF008

Table 1. Signal Names

A0-A17

Address Inputs

DQ0-DQ31 Data Input/Output

CLK

System Clock

RP

Reset/Power-down

E

Chip Enable

G

Output Enable

GD

Output Disable

W

Write Enable

LBA

Load Burst Address

WR

Write/Read

BAA

Burst Address Advance

VDD

Supply Voltage

VDDQ

Supply Voltage for Input/Output

Buffers

VPP

Program Supply Voltage

VSS

Ground

VSSQ

Input/Output Ground

NC

Not Connected Internally

DU

Don’t Use as Internally Connected

A Command Interface decodes the Instructions

written to the memory to access or modify the

memory content, to toggle the enable/disable of

read access to the Overlay block, to toggle the

burst Wrap/No-wrap or to toggle the Synchronous

or Asynchronous Read mode. A Program/Erase

Controller (P/E.C.) executes the algorithms taking

care of the timings necessary for program and

erase operations. The P/E.C. also takes care of

verification to unburden the system microproces-

sor, while a Status Register tracks the status of

each operation.

The following Instructions are executed by the

memory in either Asynchronous or Synchronous

mode.

Access or modify memory content:

- Read Array

- Read or Clear Status Register

- Read Electronic Signature

- Erase Main memory block or Overlay block

- Program Main memory or Overlay memory

- Program Erase Suspend or Resume

Toggle:

– Asynchronous/Synchronous Read

– Overlay Block Read Enable/Disable

– Burst Wrap/No-wrap

The M58BF008 devices are offered in PQFP80

and LBGA80 1.0mm ball pitch packages.

When the VPP supply is at VSS this prevents pro-

gramming and erasure of the memory blocks and,

in addition, it prevents reading of the Overlay

block. When the VPP supply is at 5V it enables

both in-system program/erase and read access to

the Overlay block. For a limited time and number

of program/erase cycles the VPP supply may be

raised to 12V to provide fast program and erase

times.

Table 2. Absolute Maximum Ratings (1)

Symbol

Parameter

Value

Unit

TA

Ambient Operating Temperature

–40 to 125

°C

TBIAS

Temperature Under Bias

–40 to 125

°C

TSTG

Storage Temperature

–55 to 150

°C

VIO

Input Output Voltage

–0.6 to VDDQ +0.6

V

VDD, VDDQ

Supply Voltage

–0.6 to 7

V

VPP

Program Voltage

–0.6 to 13.5

V

Note: 1. Stresses above those listed in the Table ”Absolute Maximum Ratings” may cause permanent damage to the device.

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