M5M5W816WG 查看數據表（PDF） - Renesas Electronics

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M5M5W816WG

8388608-BIT (524288-WORD BY 16-BIT) CMOS STATIC RAM

Renesas Electronics 

2002.04.18 Ver. 6.0

M5M5W816WG - 55HI, 70HI, 85HI

MITSUBISHI LSIs

8388608-BIT (524288-WORD BY 16-BIT) CMOS STATIC RAM

Write cycle (BC# control mode)

tCW

A 0~18

BC1#,BC2#

tsu (A)

tsu (BC1) or

tsu (BC2)

trec (W)

S1#

S2

W#

DQ1~16

(Note3)

(Note3)

(Note5)

(Note3)

(Note4)

tsu (D) th (D)

DATA IN

STABLE

(Note3)

(Note3)

(Note3)

Note 3: Hatching indicates the state is "don't care".

Note 4: A Write occurs during S1# low, S2 high overlaps BC1# and/or BC2# low and W# low.

Note 5: When the falling edge of W# is simultaneously or prior to the falling edge of BC1# and/or BC2# or the falling edge of S1#

or rising edge of S2, the outputs are maintained in the high impedance state.

Note 6: Don't apply inverted phase signal externally when DQ pin is in output mode.

6

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