M5M5V416CWG-70HI 查看數據表（PDF） - Renesas Electronics
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M5M5V416CWG-70HI Datasheet PDF : 12 Pages
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2002.04.18 Ver. 6.0
MITSUBISHI LSIs
M5M5V416CWG -55HI, -70HI
4194304-BIT (262144-WORD BY 16-BIT) CMOS STATIC RAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Vcc Supply v oltage
VI
Input v oltage
VO Output v oltage
Pd
Power dissipation
Operating
Ta
temperature
T stg Storage temperature
Conditions
With respect to GND
With respect to GND
With respect to GND
Ta=25°C
I-v ersion
Ratings
-0.5* ~ +4.6
-0.3* ~ Vcc + 0.3
0 ~ Vcc
700
- 40 ~ +85
Units
V
mW
°C
- 65 ~ +150
°C
* -3.0V in case of AC (Pulse width < 30ns)
DC ELECTRICAL CHARACTERISTICS
( Vcc=2.7 ~ 3.6V, unless noted. )
Symbol
Parameter
Conditions
VIH High-lev el input v oltage
VIL Low-lev el input v oltage
VOH High-level output voltage
IOH= -0.5mA
VOL Low-lev el output v oltage IOL=2mA
II Input leakage current
VI=0 ~ Vcc
IO Output leakage current BC1#andBC2#=VIH or S1#=VIH or S2=VILorOE#=VIH,VI/O=0~Vcc
Icc1 Activ e supply c urrent
( AC,MOS lev el )
BC1# and BC2# < 0.2V, S1# < 0.2V, S2 > Vcc-0.2V
other inputs < 0.2V or > Vcc-0.2V
Output - open (duty 100%)
f = 10MHz
f = 1MHz
Activ e supply c urrent
Icc2
( AC,TTL lev el )
BC1# and BC2# =V IL , S1# =V IL ,S2=V IH
other pins =V IH or VIL
Output - open (duty 100%)
f = 10MHz
f = 1MHz
3.0V
Icc3 Stand by s upply current
( MOS lev el )
(1) S1# > Vcc - 0.2V,
S2 > Vcc - 0.2V,
other inputs = 0 ~ Vcc
(2) S2 <0.2V,
other inputs = 0 ~ Vcc
(3) BC1# and BC2#>Vcc-0.2V
S1# < 0.2V, S2 > Vcc - 0.2V
other inputs = 0 ~ Vcc
~ +25°C
~ +40°C
~ +70°C
3.3V
3.6V
3.0V
3.3V
3.6V
3.0V~3.6V
Min
2.2
-0.2 *
2.4
-
-
-
-
-
-
-
Limits
Ty p
Max Units
Vcc+0.2V
0.4
V
0.4
±1
µA
±1
30 50
5
10
mA
30 50
5
10
1.0
0.2 1.5
2.5
2.0
0.4 2.5
µA
4.0
-
10
~ +85°C 3.0V~3.6V
-
Icc4
Stand by s upply current
( TTL lev el )
BC1# and BC2# =VIH or S1# =VIH or S2=VIL
Other inputs= 0 ~ Vcc
-
-
20
-
0.5 mA
Note 1: Direction for current flowing into IC is indicated as positive (no mark)
* -1.0V in case of AC (Pulse width < 30ns)
Note 2: Typical parameter indicates the value for the center of distribution at 3.00V, and is not 100% tested.
CAPACITANCE
Symbol Parameter
CI
Input capacitance
CO Output capacitance
Conditions
VI=GND, VI=25mVrms, f =1MHz
VO=GND,VO=25mVrms, f =1MHz
(Vcc=2.7 ~ 3.6V, unless noted. )
Limits
Min Ty p Max
10
10
Units
pF
3
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