M5M5V216ATP 查看數據表（PDF） - Renesas Electronics
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M5M5V216ATP Datasheet PDF : 9 Pages
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revision-03, 14.Jan.'03
M5M5V216ATP,RT
MITSUBISHI LSIs
2097152-BIT (131072-WORD BY 16-BIT) CMOS STATIC RAM
DESCRIPTION
FEATURES
The M5M5V216A is a f amily of low v oltage 2-Mbit static RAMs
organized as 131,072-words by 16-bit, f abricated by Mitsubishi's
high-perf ormance 0.25µm CMOS technology .
The M5M5V216A is suitable f or memory applications where a
simple interf acing , battery operating and battery backup are the
important design objectiv es.
M5M5V216ATP, RT are packaged in a 44-pin 400mil thin small
outline package. M5M5V216ATP (normal lead bend ty pe package)
, M5M5V216ART (rev erse lead bend ty pe package) , both ty pes
are v ery easy t o design a printed circuit board.
Single +2.7~+3.6V power supply
Small stand-by current: 0.3µA(3V,ty p.)
No clocks, No ref resh
Data retention supply v oltage=2.0V to 3.6V
All inputs and outputs are TTL compatible.
Easy memory expansion by S , BC1 and BC2
Common Data I/O
Three-state outputs: OR-tie capability
OE prev ents data contention in the I/O bus
Process technology : 0.25µm CMOS
Package: 44 pin 400mil TSOP (II)
PART NAME TABLE
Version,
Operating
temperature
Part name
Power
Supply
I-version M5M5V216ATP,RT -55HI
-40 ~ +85°C
2.7 ~ 3.6V
M5M5V216ATP,RT -70HI
Access
time
max.
55ns
70ns
Stand-by c urrent Icc(PD), Vcc=3.0V
ty pical *
Ratings (max.)
25°C 40°C 25°C 40°C 70°C 85°C
Activ e
current
Icc1
(3.0V, ty p.)
45mA
(10MHz)
0.3µA 1µA 1µA 3µA 8µA 24µA 5mA
(1MHz)
* "ty pical" parameter is sampled, not 100% tested.
PIN CONFIGURATION
A4 1
A3 2
A2 3
A1 4
A0 5
S
6
DQ1 7
DQ2 8
DQ3 9
DQ4 10
Vcc 11
GND 12
DQ5 13
DQ6 14
DQ7 15
DQ8 16
WE 17
A16 18
A15 19
A14 20
A13 21
A12 22
44
A5
A5 44
43
A6
A6 43
42
A7
A7 42
41 OE
OE
41
40
BC2
BC2 40
39
BC1
BC1 39
38
DQ16
DQ16
38
37
DQ15
DQ15
37
36
DQ14
DQ14
36
35
DQ13
DQ13
35
34 GND
GND
34
33
Vcc
Vcc
33
32
DQ12
DQ12
32
31
DQ11
DQ11
31
30
DQ10
DQ10
30
29 DQ9
DQ9
29
28
NC
NC
28
27
A8
A8
27
26
A9
A9
26
25
A10
A10 25
24
A11
A11 24
23
NC
NC
23
1
A4
2
A3
3
A2
Pin
Function
4
A1
5
A0
A0 ~ A16 Address input
6 S DQ1 ~ DQ16 Data input / output
7
DQ1
8
DQ2
9
DQ3
10
DQ4
S
Chip select input
W
Write control input
11
Vcc
12
GND
OE
Output inable input
13
DQ5
14
DQ6
15
DQ7
BC1
BC2
Lower By te (DQ1 ~ 8)
Upper By te(DQ9 ~ 16)
16
DQ8
17
WE
Vcc
Power supply
18
A16
GND
Ground supply
19
A15
20
A14
Outline: TP : 44P3W - H
21
A13
22
A12
RT : 44P3W - J
NC: No Connection
1
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