M5M5V216ATP 查看數據表（PDF） - Renesas Electronics
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M5M5V216ATP Datasheet PDF : 9 Pages
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revision-03, 14.Jan.'03
M5M5V216ATP,RT
MITSUBISHI LSIs
2097152-BIT (131072-WORD BY 16-BIT) CMOS STATIC RAM
POWER DOWN CHARACTERISTICS
(1) ELECTRICAL CHARACTERISTICS
Symbol
Parameter
Test conditions
Vcc (PD) Power down supply voltage
VI (BC) Byte control input BC1 & BC2
VI (S)
Chip select input S
Vcc=3.0V
Icc (PD)
Power down
supply c urrent
1) S>= Vcc - 0.2V
other inputs=0~Vcc
2)
BC1 and
S<= 0.2V,
BC2>= Vcc - 0.2V
other inputs=0~Vcc
~ +85ºC
~ +70ºC
~ +40ºC
-40 ~ +25ºC
Limits
Min Ty p Max
2.0
2.0
2.0
-
-
24
-
-
8
-
1
3
-
0.3 1
Units
V
V
V
µA
µA
µA
µA
Note 7: Typical parameter of Icc(PD) indicates the value for the
center of distribution at 3.0V, and not 100% tested.
(2) TIMING REQUIREMINTS
Symbol
Parameter
tsu (PD)
trec (PD)
Power down set up time
Power down recov ery t ime
Test conditions
Limits
Min Ty p Max
0
5
Units
ns
ms
(3) TIMING DIAGRAM
Note8: On the BC# control mode, the lev el of S# must be f ixed at S# > Vcc-0.2V or S# < 0.2V.
BC control mode
Vcc
tsu (PD)
2.7V
2.7V
trec (PD)
2.2V
BC1
BC2
BC1 , BC2>= Vcc - 0.2V
2.2V
S control mode
Vcc
2.2V
S
tsu (PD)
2.7V
2.7V
S >= Vcc - 0.2V
trec (PD)
2.2V
7
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