M62003P 查看數據表（PDF） - Renesas Electronics
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M62003P Datasheet PDF : 10 Pages
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M62001L/FP to M62008L/FP
Absolute Maximum Ratings
Item
Supply voltage
Output sink current
Power dissipation
Thermal derating
Operating temperature
Storage temperature
Symbol
VCC
Isink
Pd
Kθ
Topr
Tstg
Ratings
8
5
440
4.4
–20 to +75
–40 to +125
(Ta = 25°C, unless otherwise noted)
Unit
Conditions
V
mA
mW
mW/°C
Ta ≥ 25°C
°C
°C
Electrical Characteristics
Item
Supply voltage
Symbol Min
VS
4.30
4.05
Battery voltage
Hysteresis voltage
Circuit current
VBATT
∆VS
ICC
Sink ability
Vsat1
2.00
—
—
—
—
Source ability
Vsat2
—
Delay time
td
—
Pulse width
tpw
—
Reset output
tRESET
—
response time
Interruption output tINT
—
reset time
Typ
4.45
4.25
2.15
100
5.0
1.0
0.2
0.2
50
7
30
100
Max
4.60
4.45
2.30
—
20
4
0.4
0.4
—
10
—
—
(Ta = 25°C, unless otherwise noted)
Unit
Test Conditions
V Interruption level during VCC drop
(Equivalent to VSL)
M62001, M62002,
M62005, M62006,
M62003, M62004,
M62007, M62008,
Reset level at backup
mV ∆VS = VSH – VSL
µA VCC = 5.0V: in normal mode
VCC = 2.5V: in backup mode
V VCC = 4V, IO = 4mA
(Output saturation voltage of N-ch transistor)
VCC = 4V, IO = 1mA
(Output saturation voltage of P-ch transistor)
[CMOS output] M62001, M62003, M62005, M62007
ms External capacitance Cd = 0.33µF
µs Output pulse width (M62001, M62002, M62003, M62004)
µs Time between VCC (when falling) = VBATT and output of
RESET signal
µs Time between VCC (when falling) = VS and output of INT
signal
Summary of M62001L/FP to M62008L/FP
Type No.
M62001L/FP
M62002L/FP
M62003L/FP
M62004L/FP
M62005L/FP
M62006L/FP
M62007L/FP
M62008L/FP
Supply Voltage Detection
Level VS (V)
4.45
Battery Voltage Detection
Level VBATT (V)
2.15
4.25
4.45
4.25
Output Form
CMOS
Open drain
CMOS
Open drain
CMOS
Open drain
CMOS
Open drain
Interruption Signal
Output Mode
Pulse output
Hold output
Rev.1.00 Sep 14, 2005 page 3 of 9
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