M63817FP 查看數據表（PDF） - MITSUBISHI ELECTRIC
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M63817FP Datasheet PDF : 5 Pages
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MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
M63817P/FP/KP
8-UNIT 300mA TRANSISTOR ARRAY WITH CLAMP DIODE
ABSOLUTE MAXIMUM RATINGS (Unless otherwise noted, Ta = –40 ~ +85°C)
Symbol
V CEO
IC
VI
IF
VR
Parameter
Collector-emitter voltage
Collector current
Input voltage
Clamping diode forward current
Clamping diode reverse voltage
Pd
Power dissipation
Topr
Operating temperature
Tstg
Storage temperature
Conditions
Output, H
Current per circuit output, L
Ta = 25°C, when mounted
on board
M63817P
M63817FP
M63817KP
Ratings
Unit
–0.5 ~ +35
V
300
mA
–0.5 ~ +35
V
300
mA
35
V
1.79
1.10
W
0.68
–40 ~ +85
°C
–55 ~ +125
°C
RECOMMENDED OPERATING CONDITIONS (Unless otherwise noted, Ta = –40 ~ +85°C)
Symbol
Parameter
VO
Output voltage
Collector current
(Current per 1 cir-
IC
cuit when 8 circuits
are coming on si-
multaneously)
VIN
Input voltage
Test conditions
M63817P
M63817FP
M63817KP
Duty Cycle no more than 50%
Duty Cycle no more than 100%
Duty Cycle no more than 30%
Duty Cycle no more than 100%
Duty Cycle no more than 12%
Duty Cycle no more than 100%
Limits
Unit
min
typ
max
0
—
35
V
0
—
250
0
—
170
0
—
250
mA
0
—
130
0
—
250
0
—
100
0
—
30
V
ELECTRICAL CHARACTERISTICS (Unless otherwise noted, Ta = 25°C)
Symbol
Parameter
Test conditions
V (BR) CEO
VCE(sat)
VIN(on)
VF
IR
hFE
Collector-emitter breakdown voltage
Collector-emitter saturation voltage
“On” input voltage
Clamping diode forward volltage
Clamping diode reverse current
DC amplification factor
ICEO = 10µA
IIN = 1mA, IC = 10mA
IIN = 2mA, IC = 150mA
IIN = 1mA, IC = 10mA
IF = 250mA
VR = 35V
VCE = 10V, IC = 10mA
Limits
Unit
min
typ
max
35
—
—
V
—
—
0.2
—
—
0.8
V
7.5 11.0 15.0
V
—
1.2
2.0
V
—
—
10
µA
50
—
—
—
SWITCHING CHARACTERISTICS (Unless otherwise noted, Ta = 25°C)
Symbol
Parameter
ton
Turn-on time
toff
Turn-off time
Test conditions
CL = 15pF (note 1)
Limits
Unit
min
typ
max
—
120
—
ns
—
240
—
ns
Jan. 2000
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