M63817KP 查看數據表（PDF） - MITSUBISHI ELECTRIC
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M63817KP Datasheet PDF : 5 Pages
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MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
M63817P/FP/KP
8-UNIT 300mA TRANSISTOR ARRAY WITH CLAMP DIODE
NOTE 1 TEST CIRCUIT
INPUT
Vo
PG
50Ω
Measured device
RL
OPEN
OUTPUT
CL
TIMING DIAGRAM
50%
INPUT
OUTPUT
50%
ton
(1)Pulse generator (PG) characteristics : PRR = 1kHz,
tw = 10µs, tr = 6ns, tf = 6ns, Zo = 50Ω, VIH = 11V
(2)Input-output conditions : RL = 220Ω, Vo = 35V
(3)Electrostatic capacity CL includes floating capacitance at
connections and input capacitance at probes
TYPICAL CHARACTERISTICS
50%
50%
toff
Thermal Derating Factor Characteristics
2.0
M63817P
1.5
M63817FP
1.0
M63817KP
0.5
0.931
0.572
0.354
0
0
25
50
75 85 100
Ambient temperature Ta (°C)
Duty Cycle-Collector Characteristics
(M63817P)
400
Input Characteristics
4
Ta = –40°C
3
Ta = 25°C
2
Ta = 85°C
1
0
0 5 10 15 20 25 30
Input voltage VI (V)
Duty Cycle-Collector Characteristics
(M63817P)
400
300
1~5
6
7
8
200
•The collector current values
100 represent the current per circuit.
•Repeated frequency ≥ 10Hz
•The value the circle represents the value of
the simultaneously-operated circuit.
0 •Ta = 25°C
0
20 40 60 80
100
Duty cycle (%)
300
200
•The collector current values
100 represent the current per circuit.
•Repeated frequency ≥ 10Hz
•The value the circle represents the value of
the simultaneously-operated circuit.
0 •Ta = 85°C
0
20 40 60 80
1~3
4
5
6
7
8
100
Duty cycle (%)
Jan. 2000
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