M63817P 查看數據表（PDF） - MITSUBISHI ELECTRIC
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M63817P Datasheet PDF : 5 Pages
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MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
M63817P/FP/KP
8-UNIT 300mA TRANSISTOR ARRAY WITH CLAMP DIODE
Output Saturation Voltage
Collector Current Characteristics
100
II = 2mA
80
Ta = –40°C
Ta = 25°C
60
Ta = 85°C
40
20
0
0
0.05
0.10 0.15 0.20
Output saturation voltage VCE(sat) (V)
Grounded Emitter Transfer Characteristics
50
VCE = 4V
40
30 Ta = 85°C
20
10
Ta = –40°C
Ta = 25°C
0
0
1.0 2.0 3.0 4.0 5.0
Input voltage VI (V)
Clamping Diode Characteristics
250
200
150
Ta = 85°C
100
Ta = 25°C
50
Ta = –40°C
0
0
0.4 0.8 1.2 1.6 2.0
Forward bias voltage VF (V)
DC Amplification Factor
Collector Current Characteristics
103
VCE 10V
7 Ta = 25°C
5
3
2
102
7
5
3
2
101100 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103
Collector current Ic (mA)
Grounded Emitter Transfer Characteristics
250
VCE = 4V
Ta = 85°C
200
150
Ta = 25°C
100
Ta = –40°C
50
0
0
4
8
12
16
20
Input voltage VI (V)
Jan. 2000
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