CR5AS 查看數據表（PDF） - MITSUBISHI ELECTRIC
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CR5AS Datasheet PDF : 6 Pages
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MITSUBISHI SEMICONDUCTOR 〈THYRISTOR〉
CR5AS
MEDIUM POWER USE
NON-INSULATED TYPE, GLASS PASSIVATION TYPE
ELECTRICAL CHARACTERISTICS
Symbol
Parameter
Test conditions
Min.
IRRM
Repetitive peak reverse current
Tj=125°C, VRRM applied, RGK=220Ω
—
IDRM
Repetitive peak off-state current
Tj=125°C, VDRM applied, RGK=220Ω
—
VTM
On-state voltage
Tc=25°C, ITM=15A, instantaneous value
—
VGT
Gate trigger voltage
Tj=25°C, VD=6V, IT=0.1A
—
VGD
Gate non-trigger voltage
Tj=125°C, VD=1/2VDRM, RGK=220Ω
0.1
IGT
Gate trigger current
Tj=25°C, VD=6V, IT=0.1A
1
IH
Holding current
Tj=25°C, VD=12V, RGK=220Ω
—
Rth (j-c)
Thermal resistance
Junction to case V2
—
V2. The method point for case temperature is at anode tab.
V3. If special values of IGT are required, choose at least two items from those listed in the table below. (Example: AB, BD)
Item
A
B
C
D
IGT (µA)
1 ~ 30
20 ~ 50
40 ~ 100
80 ~ 200
The above values do not include the current flowing through the 220Ω resistance between the gate and cathode.
Limits
Typ.
—
—
—
—
—
—
3.5
—
Max.
2.0
2.0
1.8
0.8
—
200 V 3
—
3.0
Unit
mA
mA
V
V
V
µA
mA
°C/W
PERFORMANCE CURVES
MAXIMUM ON-STATE CHARACTERISTICS
102
7 Tc = 25°C
5
3
2
101
7
5
3
2
100
7
5
3
2
10–1
0.6 1.0 1.4 1.8 2.2 2.6 3.0 3.4 3.8
ON-STATE VOLTAGE (V)
RATED SURGE ON-STATE CURRENT
100
90
80
70
60
50
40
30
20
10
0
100 2 3 4 5 7 101 2 3 4 5 7 102
CONDUCTION TIME
(CYCLES AT 60Hz)
Feb.1999
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