ALLOWABLE AMBIENT TEMPERATURE VS.
AVERAGE ON-STATE CURRENT
(SINGLE-PHASE HALF WAVE)
160
140
θ
120
360°
RESISTIVE,
100
INDUCTIVE
LOADS
80
NATURAL
60
θ = 30°
40 60°
CONVECTION
WITHOUT FIN
90°
20 120°
180°
0
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
AVERAGE ON-STATE CURRENT (A)
MAXIMUM AVERAGE POWER DISSIPATION
(SINGLE-PHASE FULL WAVE)
16
14
θθ
180°
12 360°
10
RESISTIVE
LOADS
θ = 30°
60° 90° 120°
8
6
4
2
0
012345678
AVERAGE ON-STATE CURRENT (A)
ALLOWABLE AMBIENT TEMPERATURE VS.
AVERAGE ON-STATE CURRENT
(SINGLE-PHASE FULL WAVE)
160
WITHOUT FIN
140
θθ
120
360°
RESISTIVE LOADS
100
NATURAL
80
CONVECTION
60 θ = 30°
60°
40 90°
120°
20 180°
0
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
AVERAGE ON-STATE CURRENT (A)
MITSUBISHI SEMICONDUCTOR 〈THYRISTOR〉
CR5AS
MEDIUM POWER USE
NON-INSULATED TYPE, GLASS PASSIVATION TYPE
ALLOWABLE AMBIENT TEMPERATURE VS.
AVERAGE ON-STATE CURRENT
(SINGLE-PHASE HALF WAVE)
160
140
120
100
80
60
θ = 30°
40 60°
90°
20 120°
180°
0
012
θ
360°
RESISTIVE,
INDUCTIVE
LOADS
NATURAL
CONVECTION
ALUMINUM BOARD
80 80 t2.3
345678
AVERAGE ON-STATE CURRENT (A)
ALLOWABLE CASE TEMPERATURE VS.
AVERAGE ON-STATE CURRENT
(SINGLE-PHASE FULL WAVE)
160
RESISTIVE
140
LOADS
θθ
120
360°
100
80
60
40
θ = 30° 60° 90° 120° 180°
20
0
012345678
AVERAGE ON-STATE CURRENT (A)
ALLOWABLE AMBIENT TEMPERATURE VS.
AVERAGE ON-STATE CURRENT
(SINGLE-PHASE FULL WAVE)
160
ALUMINUM BOARD
140 80 80 t2.3
θθ
120
360°
RESISTIVE
100
θ = 30° LOADS
80
60° NATURAL
90° CONVECTION
60
120°
180°
40
20
0
012345678
AVERAGE ON-STATE CURRENT (A)
Feb.1999