AS29F010 查看數據表（PDF） - Alliance Semiconductor
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AS29F010 Datasheet PDF : 10 Pages
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0D[LPXP#QHJDWLYH#RYHUVKRRW#ZDYHIRUP
+0.8V
-0.5V
0D[LPXP#SRVLWLYH#RYHUVKRRW#ZDYHIRUP
VCC+0.5V
+2.0V
®
-2.0V
VCC+2.0V
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'&#HOHFWULFDO#FKDUDFWHULVWLFV
Parameter
Symbol
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Test conditions
Min
Max
Unit
Input load current
Output leakage current
Output short circuit current
Active current, read @ 6MHz
Active current, program/erase
Standby current
Input: low level
Input: high level
Output low voltage
Output high level
Low VCC lock out voltage
Input HV select voltage
ILI
VIN = VSS to VCC, VSS = VMAX
ILO
VOUT = VSS to VCC, VSS = VMAX
IOS
VOUT = 0.5V
ICC
CE = VIL, OE = VIH
ICCPRG
CE = VIL, OE = VIH
ISB1 (TTL) CE = VIH
ISB2 (CMOS) CE = VCC
ICCPD
RP = 0V
VIL
VIH
VOL
IOL = 12mA
VOH1
IOH = -2.5 mA
VOH2
IOH = -100 µA
VLKO
VID
-
-
-
-
-
-
-
-
0.5
2.0
-
2.4
VCC - 0.4
3.2
11.5
±1
µA
±1
µA
100
mA
30
mA
50
mA
1.5
mA
1.0
mA
2
µA
0.8
V
VSS + 0.3 V
0.45
V
-
V
-
V
4.2
V
12.5
V
1RWHV
1 Not more than one output tested simultaneously. Duration of the short circuit must not be >1 second. OUT = 0.5V was selected to avoid test problems
caused by tester ground degradation. (This parameter is sampled and not 100% tested, but guaranteed by characterization.)
2 The ICC current listed includes both the DC operating current and the frequency dependent component (@ 6 MHz). The frequency componenttypically
is less than 2 mA/MHz with OE at VIH.
3 ICC active while program or erase operations are in progress.
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