MA729(2001) 查看數據表（PDF） - Panasonic Corporation
零件编号
产品描述 (功能)
生产厂家
MA729 Datasheet PDF : 3 Pages
| |||
Schottky Barrier Diodes (SBD)
MA2J729 (MA729)
Silicon epitaxial planar type
For super-high speed switching circuit
For small current rectification
I Features
• Sealed in the S-mini (2-pin) mold and super small type
• Allowing to rectify under (IF(AV) = 200 mA) condition
• Allowing high-density mounting
I Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol
Rating
Unit
Reverse voltage (DC)
VR
30
V
Repetitive peak reverse voltage
VRRM
30
V
Peak forward current
IFM
300
mA
Average forward current
IF(AV)
200
mA
Non-repetitive peak forward
IFSM
1
A
surge current*
Junction temperature
Storage temperature
Tj
150
°C
Tstg
−55 to +150
°C
Note) * : The peak-to-peak value in one cycle of 50 Hz sine-wave
(non-repetitive)
Unit : mm
K
A
2
1
0.4 ± 0.1
1.7 ± 0.1
2.5 ± 0.2
0.4 ± 0.1
1 : Anode
2 : Cathode
S-Mini Type Package (2-pin)
Marking Symbol: 2B
I Electrical Characteristics Ta = 25°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Reverse current (DC)
Forward voltage (DC)
Terminal capacitance
Reverse recovery time*
IR
VR = 30 V
VF
IF = 200 mA
Ct
VR = 0 V, f = 1 MHz
trr
IF = IR = 100 mA
Irr = 10 mA, RL = 100 Ω
50
µA
0.55
V
30
pF
3.0
ns
Note) 1. Schottky barrier diode is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a
human body and the leakage of current from the operating equipment
2. Rated input/output frequency: 1 000 MHz
3. * : trr measuring instrument
Bias Application Unit N-50BU
Input Pulse
Output Pulse
tr
tp
10%
t
IF
trr
t
A
Pulse Generator
(PG-10N)
Rs = 50 Ω
W.F.Analyzer
(SAS-8130)
Ri = 50 Ω
VR
90%
tp = 2 µs
tr = 0.35 ns
δ = 0.05
Irr = 10 mA
IF = 100 mA
IR = 100 mA
RL = 100 Ω
Note) The part number in the parenthesis shows conventional part number.
504
Share Link: 